scholarly journals Inline deposited PassDop layers for rear side passivation and contacting of p-type c-Si PERL solar cells with high bifaciality

2019 ◽  
Author(s):  
Mohammad Hassan Norouzi ◽  
Pierre Saint-Cast ◽  
Elmar Lohmüller ◽  
Sabrina Lohmüller ◽  
Bernd Steinhauser ◽  
...  
Keyword(s):  
Solar Cells ◽  
Rear Side ◽  
Type C ◽  
P Type

p-type c-Si solar cells based on rear side laser processing of Al2O3/SiCx stacks

2012 ◽  
Vol 106 ◽  
pp. 80-83 ◽  
Author(s):  
Pablo Ortega ◽  
Isidro Martín ◽  
Gema Lopez ◽  
Monica Colina ◽  
Albert Orpella ◽  
...  
Keyword(s):  
Solar Cells ◽  
Laser Processing ◽  
Rear Side ◽  
Si Solar Cells ◽  
Type C ◽  
P Type

N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells

2010 ◽  
Author(s):  
Quanyuan Shang ◽  
Walter Seaman ◽  
Mike Whitney ◽  
Mark George ◽  
John Madocks ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Type C ◽  
P Type

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

2019 ◽  
Vol 200 ◽  
pp. 109937 ◽  
Author(s):  
Paul Procel ◽  
Philipp Löper ◽  
Felice Crupi ◽  
Christophe Ballif ◽  
Andrea Ingenito
Keyword(s):  
Solar Cells ◽  
Numerical Simulations ◽  
Si Solar Cells ◽  
Type C ◽  
P Type

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1972-1975 ◽  
Author(s):  
Ying Xu ◽  
Zhihua Hu ◽  
Hongwei Diao ◽  
Yi Cai ◽  
Shibin Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanocrystalline Silicon ◽  
Heterojunction Solar Cells ◽  
Type C ◽  
P Type

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

scholarly journals Material Requirements for Buffer Layers Used to Obtain Solar Cells with High Open Circuit Voltages

1999 ◽  
Vol 557 ◽  
Author(s):  
Bolko Von Roedern ◽  
Gottfried H. Bauer
Keyword(s):  
Solar Cells ◽  
Transparent Conductive Oxide ◽  
Contact Layer ◽  
Open Circuit ◽  
Buffer Layers ◽  
Hit Cells ◽  
Type C ◽  
P Type ◽  
Open Circuit Voltages ◽  
Material Requirements

AbstractThis paper discusses material requirements for junction layers needed to obtain solar cells with highest possible open-circuit voltages (VOC). In a typical a-Si:H-based “p/i/n” solar cell, this includes the transparent conductive oxide (TCO) contact layer, the p-layer, a “buffer layer” inserted at the p/i interface, and the surface portion of the intrinsic layer. In HIT-cells, the i-layer between (n-type) c-Si and (p-type) a-Si:H may be regarded as the buffer. Our suggestion to obtain high values of VOC relies on using materials with high lifetimes and low carrier mobilities that are capable of reducing surface or junction recombination by reducing the flow of carriers into this loss-pathway. We provide a general calculation that supports these approaches and can explain why these schemes are beneficial for all solar cells.

Implementation and understanding of p+ fired rear hole selective tunnel oxide passivating contacts enabling >22% conversion efficiency in p-type c-Si solar cells

2021 ◽  
Vol 219 ◽  
pp. 110809
Author(s):  
Andrea Ingenito ◽  
Sofia Libraro ◽  
Philippe Wyss ◽  
Christophe Allebé ◽  
Matthieu Despeisse ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Si Solar Cells ◽  
Type C ◽  
P Type

Band Gap Optimization of Thin Film a-Si:H Bifacial Solar Cells (BFSCs) Using AFORS-HET

2019 ◽  
Vol 966 ◽  
pp. 409-414
Author(s):  
Dadan Hamdani ◽  
Yoyok Cahyono ◽  
Gatut Yudoyono ◽  
Darminto
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Maximum Efficiency ◽  
Rear Side ◽  
Front Side ◽  
P Type

Using well-practiced AFORS-HET software, thin film a-Si:H Bifacial Solar Cells (BFSCs) has been investigated and simulated. The aim of this study is to simulate performances of a-Si:H BFCs with structure of Glass/TCO/(n) a-Si:H/(i) a-Si:H/(p) a-Si:H/TCO/Glass. The results show that the optimized band gap for each layers are 2.0 eV (n-type), 1.7 eV (i-type) and 2.0 eV (p-type), respectively. The final simulation show that a significant increase VOC, JSC, FF and Eff for both side of a-Si:H BFSCs. Finally, the maximum efficiency obtained are 7.79% for the front side and 5.68% for the rear side, respectively.

Mechanism of Metallization-Induced Losses in the Rear-Side of Fully Screen-Printed p-type PERC Solar Cells

2020 ◽  
Vol 10 (2) ◽  
pp. 407-416 ◽  
Author(s):  
Supawan Joonwichien ◽  
Masaaki Moriya ◽  
Satoshi Utsunomiya ◽  
Yasuhiro Kida ◽  
Katsuhiko Shirasawa ◽  
...  
Keyword(s):  
Solar Cells ◽  
Rear Side ◽  
P Type ◽  
Screen Printed
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