scholarly journals A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

2019 ◽  
Vol 126 (12) ◽  
pp. 125706
Author(s):  
M. K. Sharpe ◽  
I. P. Marko ◽  
D. A. Duffy ◽  
J. England ◽  
E. Schneider ◽  
...  
Keyword(s):  
Comparative Study ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray

Photoluminescence from Si/Ge Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
G.F.A. van de Walle ◽  
E.A. Montie ◽  
D.J. Gravesteijn ◽  
C.W. Fredriksz
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Short Period ◽  
Superlattice Period

AbstractThe luminescence of short period Si/Ge superlattices was systematically studied as a function of composition, strain and superlattice period. With Rutherford backscattering spectrometry the composition was determined, while X-ray diffraction was used to determine the strain and superlattice period. Two luminescence bands around 1,6 µm were observed. Etching experiments showed that the signal originated from the superlattice. Changes in wavelength and intensity were found to be related to the composition and the strain, while no clear influence of the superlattice period was observed.

X-ray diffraction and Rutherford backscattering spectrometry of Ba1NbxTi1−xO3 thin films synthesized by laser ablation

1999 ◽  
Vol 86 (4) ◽  
pp. 2307-2310 ◽  
Author(s):  
M. Nasir Khan ◽  
Hyun-Tak Kim ◽  
T. Kusawake ◽  
H. Kudo ◽  
K. Ohshima ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray

Strain and Compositional Analysis of InGaN/GaN Layers

2000 ◽  
Vol 639 ◽  
Author(s):  
Sérgio Pereira ◽  
Maria. R. Correia ◽  
Estela Pereira ◽  
C. Trager-Cowan ◽  
F. Sweeney ◽  
...  
Keyword(s):  
Driving Force ◽  
Rutherford Backscattering Spectrometry ◽  
Compositional Analysis ◽  
Depth Resolution ◽  
Indium Content ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
Strained Layers ◽  
X Ray ◽  
Strain Components

ABSTRACTWe investigate strain and composition of epitaxial single layers of wurtzite InxGa1−xN (0<x<0.25) grown by MOCVD on top of GaN/Al203 substrates. It is shown that significant inaccuracies may arise in composition assessments if strain in InxGa1−xN/GaN heterostructures is not properly taken into account. Rutherford backscattering spectrometry (RBS) measures composition, free from the effects of strain and with depth resolution. Using X-ray diffraction (XRD) we measure both a- and c- parameters of the strained wurtzite films. By measuring both lattice parameters and solving Hooke's equation, a good estimation for composition can be obtained from XRD data. The agreement between RBS and XRD data for composition allows reliable values for perpendicular (εzz) and parallel strain components ( (εxx) to be determined. RBS and depth resolved cathodoluminescence (CL) measurements further indicate that the indium content is not uniform over depth in some samples. This effect occurs for the most strained layers, suggesting that strain is the driving force for compositional pulling.

Applications of Amorphous Ti-P-N Diffusion Barriers in Silicon Metallization

1990 ◽  
Vol 181 ◽  
Author(s):  
E. Kolawa ◽  
L. Halperin ◽  
P. Pokela ◽  
Quat T Vu ◽  
C. W. Nieh
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Diffusion Barriers ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Alloy Films ◽  
X Ray

ABSTRACTThin films of amorphous TiP and TiPN2 alloys were deposited by sputtering of a TiP target in an Ar and N2/Ar mixture, respectively. These alloy films were tested as diffusion barriers between Al and Si as well as between Cu and Si and also in metallizations which included TiSi2 as the contacting layer. Rutherford backscattering spectrometry, x-ray diffraction and electrical measurements were used to determine the barrier effectiveness. We find that TiP and TiPN2 films prevent the interdiffusion and reaction between Al and Si up to 500°C and 600°C for 30 minutes annealing, respectively, and between Cu and Si up to 600°C and 700°C, respectively.

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