X-ray diffraction and channeling-Rutherford backscattering spectrometry studies of ion implantation damage in AlxGa1−xAs

1998 ◽  
Vol 83 (3) ◽  
pp. 1265-1269 ◽  
Author(s):  
P. Partyka ◽  
R. S. Averback ◽  
D. V. Forbes ◽  
J. J. Coleman ◽  
P. Ehrhart
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Implantation Damage

Silicide Formation in High-Dose Fe-Implanted Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
Z. Tan ◽  
F. Namavar ◽  
S. M. Heald ◽  
J. I. Budnick ◽  
F. H. Sanchez
Keyword(s):  
Fine Structure ◽  
Single Phase ◽  
Rutherford Backscattering Spectrometry ◽  
High Dose ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Implantation Damage ◽  
X Ray Absorption ◽  
Post Implantation

ABSTRACTWe have studied the silicide formation in Fe-implanted Si(100), with 1×1017-1×1018 Fe/cm2, using extended x-ray-absorption fine structure (EXAFS), x-ray diffraction and Rutherford backscattering spectrometry (RBS) methods. In the samples as-implanted at 350 °C, no silicide was observed at doses below 3×1017 Fe/cm2. At 5×1017 Fe/cm2, both α-FeSi2 and (β-FeSi2 form but α-FeSi2 appears to be the majority phase. As the dose increases to 7×1017 and above, ordered FeSi forms, but implantation damage is severe and a large number of Fe atoms are in very disordered environments. In addition to FeSi, Fe5Si3 was also observed in the 1×1018 Fe/cm2 sample. Upon post-implantation annealing at 700 °C or 900 °C, single phase P-FeSi2 was obtained independent of the dosage.

scholarly journals Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

1993 ◽  
Vol 235 (1-2) ◽  
pp. 189-197 ◽  
Author(s):  
J.G.E. Klappe ◽  
I. Bársony ◽  
J.R. Liefting ◽  
T.W. Ryan
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Implantation Damage

Photoluminescence from Si/Ge Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
G.F.A. van de Walle ◽  
E.A. Montie ◽  
D.J. Gravesteijn ◽  
C.W. Fredriksz
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Short Period ◽  
Superlattice Period

AbstractThe luminescence of short period Si/Ge superlattices was systematically studied as a function of composition, strain and superlattice period. With Rutherford backscattering spectrometry the composition was determined, while X-ray diffraction was used to determine the strain and superlattice period. Two luminescence bands around 1,6 µm were observed. Etching experiments showed that the signal originated from the superlattice. Changes in wavelength and intensity were found to be related to the composition and the strain, while no clear influence of the superlattice period was observed.

X-ray diffraction and Rutherford backscattering spectrometry of Ba1NbxTi1−xO3 thin films synthesized by laser ablation

1999 ◽  
Vol 86 (4) ◽  
pp. 2307-2310 ◽  
Author(s):  
M. Nasir Khan ◽  
Hyun-Tak Kim ◽  
T. Kusawake ◽  
H. Kudo ◽  
K. Ohshima ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray
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