scholarly journals Lattice location study of low-fluence ion-implanted 124In in 3C-SiC

2019 ◽  
Vol 125 (21) ◽  
pp. 215706
Author(s):  
A. R. G. Costa ◽  
U. Wahl ◽  
J. G. Correia ◽  
E. David-Bosne ◽  
V. Augustyns ◽  
...  
Keyword(s):  
Lattice Location ◽  
Location Study ◽  
Ion Implanted

scholarly journals Lattice location study of ion implanted Sn and Sn-related defects in Ge

2010 ◽  
Vol 81 (15) ◽  
Author(s):  
S. Decoster ◽  
S. Cottenier ◽  
U. Wahl ◽  
J. G. Correia ◽  
A. Vantomme
Keyword(s):  
Lattice Location ◽  
Location Study ◽  
Ion Implanted

Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes

1991 ◽  
Vol 38-41 ◽  
pp. 1221-1226 ◽  
Author(s):  
S. Winter ◽  
S. Blässer ◽  
H. Hofsäss ◽  
S.G. Jahn ◽  
G. Lindner ◽  
...  
Keyword(s):  
Lattice Location ◽  
Ion Implanted

Lattice location study of H in Ta by the channelling method

1987 ◽  
Vol 130 ◽  
pp. 207-208 ◽  
Author(s):  
E. Yagi ◽  
S. Nakamura ◽  
T. Kobayashi ◽  
F. Kanoa ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Lattice Location ◽  
Location Study

Channeling Measurements on Deuterium Implanted Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
B. Bech Nielsen
Keyword(s):  
Nuclear Reaction ◽  
Tetrahedral Site ◽  
Lattice Location ◽  
Temperature Range ◽  
Bond Center ◽  
Ion Implanted

ABSTRACTThe channeling technique has been used to study the lattice location of deuterium ion-implanted into silicon. Compared to earlier measurements by Picraux and Vook, the temperature range has been extended from 30 to 500 K, and the dose has been decreased down to ≃ 8 × 1014 D/cm2. The implantation was performed at 30 K gnd at an energy of 10 keV. The channeling analysis was done using the d(3 He,p)4 He nuclear reaction. Angular scans were measured along the <100>, <110>, <111> axis and the {100}, {110}, {111} planes, Experiments were carried out on the implanted sample (30K) and after annealing to 200 and 500 K. In the as-implanted sample, 80% of the deuterium is located close to the bond center, whereas the remaining 20% is placed at the tetrahedral site. The deuterium sites change after annealing to 200 and 50OK, and the nature of these annealings stages will be discussed.

Impurity lattice location in ion-implanted beryllium: Measurements and systematics

1980 ◽  
Vol 22 (1) ◽  
pp. 63-79 ◽  
Author(s):  
R. Vianden ◽  
E. N. Kaufmann ◽  
J. W. Rodgers
Keyword(s):  
Lattice Location ◽  
Ion Implanted
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