Impurity lattice location in ion-implanted beryllium: Measurements and systematics

1980 ◽  
Vol 22 (1) ◽  
pp. 63-79 ◽  
Author(s):  
R. Vianden ◽  
E. N. Kaufmann ◽  
J. W. Rodgers
1991 ◽  
Vol 38-41 ◽  
pp. 1221-1226 ◽  
Author(s):  
S. Winter ◽  
S. Blässer ◽  
H. Hofsäss ◽  
S.G. Jahn ◽  
G. Lindner ◽  
...  

1985 ◽  
Vol 59 ◽  
Author(s):  
B. Bech Nielsen

ABSTRACTThe channeling technique has been used to study the lattice location of deuterium ion-implanted into silicon. Compared to earlier measurements by Picraux and Vook, the temperature range has been extended from 30 to 500 K, and the dose has been decreased down to ≃ 8 × 1014 D/cm2. The implantation was performed at 30 K gnd at an energy of 10 keV. The channeling analysis was done using the d(3 He,p)4 He nuclear reaction. Angular scans were measured along the <100>, <110>, <111> axis and the {100}, {110}, {111} planes, Experiments were carried out on the implanted sample (30K) and after annealing to 200 and 500 K. In the as-implanted sample, 80% of the deuterium is located close to the bond center, whereas the remaining 20% is placed at the tetrahedral site. The deuterium sites change after annealing to 200 and 50OK, and the nature of these annealings stages will be discussed.


1993 ◽  
Vol 143-147 ◽  
pp. 271-276
Author(s):  
G. Weyer ◽  
P. Kringhøj ◽  
Kristian Freitag

2005 ◽  
Vol 124-125 ◽  
pp. 249-252 ◽  
Author(s):  
A.M. Piro ◽  
L. Romano ◽  
S. Mirabella ◽  
M.G. Grimaldi

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