Lattice location of Cr in Cr+ ion implanted BCC Fe(100) by particle induced x-ray emission and channeling

A contrast in the electronic structures of B ion implanted ZnO thin films grown on glass and silicon substrates by using x-ray absorption spectroscopy

Journal of Applied Physics ◽

10.1063/5.0007733 ◽

2020 ◽

Vol 128 (6) ◽

pp. 065303

Author(s):

Krishna Kumar ◽

Shi-Chen Wu ◽

Yueh-Chung Yu ◽

Da-Hua Wei ◽

Jau-Wern Chiou

Keyword(s):

Thin Films ◽

Absorption Spectroscopy ◽

Electronic Structures ◽

Zno Thin Films ◽

Silicon Substrates ◽

X Ray ◽

X Ray Absorption ◽

Ion Implanted

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Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.38-41.1221 ◽

1991 ◽

Vol 38-41 ◽

pp. 1221-1226 ◽

Cited By ~ 2

Author(s):

S. Winter ◽

S. Blässer ◽

H. Hofsäss ◽

S.G. Jahn ◽

G. Lindner ◽

...

Keyword(s):

Lattice Location ◽

Ion Implanted

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Characterization of Lattice Damage in Ion Implanted Silicon: Monte Carlo Simulation Combined with Double Crystal X-Ray Diffraction

phys stat sol (a) ◽

10.1002/pssa.2210910254 ◽

1985 ◽

Vol 91 (2) ◽

pp. K125-K127 ◽

Cited By ~ 6

Author(s):

F. Cembali ◽

A. M. Mazzone ◽

M. Servidori

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

X Ray Diffraction ◽

Double Crystal ◽

X Ray ◽

Lattice Damage ◽

Ion Implanted

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Lattice location and electrical conductivity in ion implanted TiO2 single crystals

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(96)00520-4 ◽

1996 ◽

Vol 120 (1-4) ◽

pp. 252-256 ◽

Cited By ~ 27

Author(s):

R. Fromknecht ◽

R. Auer ◽

I. Khubeis ◽

O. Meyer

Keyword(s):

Electrical Conductivity ◽

Single Crystals ◽

Lattice Location ◽

Ion Implanted

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Doping of GaN by ion implantation

MRS Proceedings ◽

10.1557/proc-650-r8.4/o13.4 ◽

2000 ◽

Vol 650 ◽

Author(s):

Eduardo J. Alves ◽

C. Liu ◽

Maria F. da Silva ◽

José C. Soares ◽

Rosário Correia ◽

...

Keyword(s):

Optical Properties ◽

Ion Implantation ◽

Room Temperature ◽

Lattice Site ◽

Helium Temperature ◽

Site Location ◽

Structural And Optical Properties ◽

X Ray ◽

Er Doped ◽

Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

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