scholarly journals On-chip integrated photonic circuits based on two-dimensional materials and hexagonal boron nitride as the optical confinement layer

2019 ◽  
Vol 125 (23) ◽  
pp. 230901 ◽  
Author(s):  
Tianhua Ren ◽  
Kian Ping Loh
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Optical Confinement ◽  
Photonic Circuits ◽  
Two Dimensional Materials ◽  
On Chip

scholarly journals Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride

2018 ◽  
Vol 98 (16) ◽  
Author(s):  
Claudio Attaccalite ◽  
Myrta Grüning ◽  
Hakim Amara ◽  
Sylvain Latil ◽  
François Ducastelle
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Photon Absorption ◽  
Two Dimensional ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Two Dimensional Materials

scholarly journals Perfect proton selectivity in ion transport through two-dimensional crystals

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
L. Mogg ◽  
S. Zhang ◽  
G.-P. Hao ◽  
K. Gopinadhan ◽  
D. Barry ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Electrical Current ◽  
Gas Permeation ◽  
Chloride Ions ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Exfoliated Graphene ◽  
Hydrochloric Acid Solutions ◽  
Two Dimensional Materials

Abstract Defect-free monolayers of graphene and hexagonal boron nitride are surprisingly permeable to thermal protons, despite being completely impenetrable to all gases. It remains untested whether small ions can permeate through the two-dimensional crystals. Here we show that mechanically exfoliated graphene and hexagonal boron nitride exhibit perfect Nernst selectivity such that only protons can permeate through, with no detectable flow of counterions. In the experiments, we use suspended monolayers that have few, if any, atomic-scale defects, as shown by gas permeation tests, and place them to separate reservoirs filled with hydrochloric acid solutions. Protons account for all the electrical current and chloride ions are blocked. This result corroborates the previous conclusion that thermal protons can pierce defect-free two-dimensional crystals. Besides the importance for theoretical developments, our results are also of interest for research on various separation technologies based on two-dimensional materials.

scholarly journals DEFECT ENGINEERING OF 2D MONATOMIC-LAYER MATERIALS

2013 ◽  
Vol 27 (23) ◽  
pp. 1330017 ◽  
Author(s):  
QING PENG ◽  
JARED CREAN ◽  
ALBERT K. DEARDEN ◽  
CHEN HUANG ◽  
XIAODONG WEN ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Two Dimensional Materials ◽  
And Behavior

Atomic-thick monolayer two-dimensional materials present advantageous properties compared to their bulk counterparts. The properties and behavior of these monolayers can be modified by introducing defects, namely defect engineering. In this paper, we review a group of common two-dimensional crystals, including graphene, graphyne, graphdiyne, graphn-yne, silicene, germanene, hexagonal boron nitride monolayers and MoS2monolayers, focusing on the effect of the defect engineering on these two-dimensional monolayer materials. Defect engineering leads to the discovery of potentially exotic properties that make the field of two-dimensional crystals fertile for future investigations and emerging technological applications with precisely tailored properties.

scholarly journals Making van der Waals Heterostructures Assembly Accessible to Everyone

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2305
Author(s):  
Sergey G. Martanov ◽  
Natalia K. Zhurbina ◽  
Mikhail V. Pugachev ◽  
Aliaksandr I. Duleba ◽  
Mark A. Akmaev ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Condensed Matter ◽  
Van Der Waals ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Online Retail ◽  
Two Dimensional Materials ◽  
Retail Services

Van-der Waals heterostructures assembled from one or few atomic layer thickness crystals are becoming increasingly more popular in condensed matter physics. These structures are assembled using transfer machines, those are based on mask aligners, probe stations or are home-made. For many laboratories it is vital to build a simple, convenient and universal transfer machine. In this paper we discuss the guiding principles for the design of such a machine, review the existing machines and demonstrate our own construction, that is powerful and fast-in-operation. All components of this machine are extremely cheap and can be easily purchased using common online retail services. Moreover, assembling a heterostructure out of exfoliated commercially available hexagonal boron nitride and tungsten diselenide crystals with a pick-up technique and using the microphotolumenescence spectra, we show well-resolved exciton and trion lines, as a results of disorder suppression in WSe2 monolayer. Our results thus show that technology of the two-dimensional materials and heterostructures becomes accessible to anyone.

Growth of two-dimensional materials on hexagonal boron nitride (h-BN)

2018 ◽  
Vol 30 (3) ◽  
pp. 034003 ◽  
Author(s):  
Xinsheng Wang ◽  
Mongur Hossain ◽  
Zhongming Wei ◽  
Liming Xie
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Two Dimensional Materials

scholarly journals Boron Vacancy: A strategy to boost the Oxygen Reduction Reaction of hexagonal boron nitride nanosheet in hBN-2H-MoS2 heterostructure

2021 ◽  
Author(s):  
Dipayan Roy ◽  
Karamjyoti Panigrahi ◽  
Uday Kumar Ghorui ◽  
Bikram Kumar Das ◽  
Souvik Bhattacharjee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Active Sites ◽  
Hexagonal Boron Nitride ◽  
Reduction Reaction ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Boron Nitride Nanosheet ◽  
Two Dimensional Materials ◽  
Surface Active ◽  
High Band

Incorporation of vacancies in a system considered as proficient defect engineering in general catalytic modulation. Among the two-dimensional materials, surface active sites’ deficiency and high band gap restrict hexagonal boron...

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials

Nanoscale ◽  
2018 ◽  
Vol 10 (32) ◽  
pp. 15205-15212 ◽  
Author(s):  
Hamin Park ◽  
Gwang Hyuk Shin ◽  
Khang June Lee ◽  
Sung-Yool Choi
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Etching Rate ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Device Integration

We propose the atomic-scale etching of h-BN achieving an etching rate less than 1 nm min−1 for device integration based on 2D materials.

scholarly journals The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

2021 ◽  
Vol 4 (2) ◽  
pp. 98-108
Author(s):  
Theresia Knobloch ◽  
Yury Yu. Illarionov ◽  
Fabian Ducry ◽  
Christian Schleich ◽  
Stefan Wachter ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Performance Limits ◽  
Two Dimensional Materials ◽  
Scaled Cmos
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