Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials

Nanoscale ◽  
2018 ◽  
Vol 10 (32) ◽  
pp. 15205-15212 ◽  
Author(s):  
Hamin Park ◽  
Gwang Hyuk Shin ◽  
Khang June Lee ◽  
Sung-Yool Choi
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Etching Rate ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Device Integration

We propose the atomic-scale etching of h-BN achieving an etching rate less than 1 nm min−1 for device integration based on 2D materials.

scholarly journals Perfect proton selectivity in ion transport through two-dimensional crystals

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
L. Mogg ◽  
S. Zhang ◽  
G.-P. Hao ◽  
K. Gopinadhan ◽  
D. Barry ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Electrical Current ◽  
Gas Permeation ◽  
Chloride Ions ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Exfoliated Graphene ◽  
Hydrochloric Acid Solutions ◽  
Two Dimensional Materials

Abstract Defect-free monolayers of graphene and hexagonal boron nitride are surprisingly permeable to thermal protons, despite being completely impenetrable to all gases. It remains untested whether small ions can permeate through the two-dimensional crystals. Here we show that mechanically exfoliated graphene and hexagonal boron nitride exhibit perfect Nernst selectivity such that only protons can permeate through, with no detectable flow of counterions. In the experiments, we use suspended monolayers that have few, if any, atomic-scale defects, as shown by gas permeation tests, and place them to separate reservoirs filled with hydrochloric acid solutions. Protons account for all the electrical current and chloride ions are blocked. This result corroborates the previous conclusion that thermal protons can pierce defect-free two-dimensional crystals. Besides the importance for theoretical developments, our results are also of interest for research on various separation technologies based on two-dimensional materials.

scholarly journals Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride

2018 ◽  
Vol 98 (16) ◽  
Author(s):  
Claudio Attaccalite ◽  
Myrta Grüning ◽  
Hakim Amara ◽  
Sylvain Latil ◽  
François Ducastelle
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Photon Absorption ◽  
Two Dimensional ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Two Dimensional Materials

scholarly journals Processing and characterisation of two-dimensional nanostructures

2014 ◽  
Vol 70 (a1) ◽  
pp. C510-C510
Author(s):  
Valeria Nicolosi
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Atomic Scale ◽  
Metal Chalcogenides ◽  
Two Dimensional ◽  
Wide Range ◽  
Electron Microscopes ◽  
Low Dimensional ◽  
Aberration Corrected

Low-dimensional nanostructured materials such as organic and inorganic nanotubes, nanowires and platelets are potentially useful in a number of areas of nanoscience and nanotechnology due to their remarkable mechanical, electrical and thermal properties. However difficulties associated with their lack of processability have seriously hampered both. In the last few years dispersion and exfoliation methods have been developed and demonstrated to apply universally to 1D and 2D nanostructures of very diverse nature, offering a practical means of processing the nanostructures for a wide range of innovative technologies. Among the first materials to have benefitted most from these advances are carbon nanotubes [6] and more recently graphene. Recently this work has been extended to boron nitride and a wide range of two-dimensional transition metal chalcogenides. These are potentially important because they occur in >40 different types with a wide range of electronic properties, varying from metallic to semiconducting. To make real applications truly feasible, however, it is crucial to fully characterize the nanostructures on the atomic scale and correlate this information with their physical and chemical properties. Advances in aberration-corrected optics in electron microscopy have revolutionised the way to characterise nano-materials, opening new frontiers for materials science. With the recent advances in nanostructure processability, electron microscopes are now revealing the structure of the individual components of nanomaterials, atom by atom. Here we will present an overview of very different low-dimensional materials issues, showing what aberration-corrected electron microscopy can do to answer materials scientists' questions. Particular emphasis will be given to the investigation of hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten disulfide (WS2) and the study of their structure, defects, stacking sequence, vacancies and low-atomic number individual adatoms. The analyses of the h-BN data showed that majority of nanosheets retain bulk stacking. However several of the images displayed stacking different from the bulk. Similar, to 2D h-BN, images of MoS2 and WS2 have shown the stacking previously unobserved in the bulk. This novel stacking consists of Mo/W stacked on the top each other in the consecutive layers.

scholarly journals DEFECT ENGINEERING OF 2D MONATOMIC-LAYER MATERIALS

2013 ◽  
Vol 27 (23) ◽  
pp. 1330017 ◽  
Author(s):  
QING PENG ◽  
JARED CREAN ◽  
ALBERT K. DEARDEN ◽  
CHEN HUANG ◽  
XIAODONG WEN ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Two Dimensional Materials ◽  
And Behavior

Atomic-thick monolayer two-dimensional materials present advantageous properties compared to their bulk counterparts. The properties and behavior of these monolayers can be modified by introducing defects, namely defect engineering. In this paper, we review a group of common two-dimensional crystals, including graphene, graphyne, graphdiyne, graphn-yne, silicene, germanene, hexagonal boron nitride monolayers and MoS2monolayers, focusing on the effect of the defect engineering on these two-dimensional monolayer materials. Defect engineering leads to the discovery of potentially exotic properties that make the field of two-dimensional crystals fertile for future investigations and emerging technological applications with precisely tailored properties.

scholarly journals Making van der Waals Heterostructures Assembly Accessible to Everyone

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2305
Author(s):  
Sergey G. Martanov ◽  
Natalia K. Zhurbina ◽  
Mikhail V. Pugachev ◽  
Aliaksandr I. Duleba ◽  
Mark A. Akmaev ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Condensed Matter ◽  
Van Der Waals ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Online Retail ◽  
Two Dimensional Materials ◽  
Retail Services

Van-der Waals heterostructures assembled from one or few atomic layer thickness crystals are becoming increasingly more popular in condensed matter physics. These structures are assembled using transfer machines, those are based on mask aligners, probe stations or are home-made. For many laboratories it is vital to build a simple, convenient and universal transfer machine. In this paper we discuss the guiding principles for the design of such a machine, review the existing machines and demonstrate our own construction, that is powerful and fast-in-operation. All components of this machine are extremely cheap and can be easily purchased using common online retail services. Moreover, assembling a heterostructure out of exfoliated commercially available hexagonal boron nitride and tungsten diselenide crystals with a pick-up technique and using the microphotolumenescence spectra, we show well-resolved exciton and trion lines, as a results of disorder suppression in WSe2 monolayer. Our results thus show that technology of the two-dimensional materials and heterostructures becomes accessible to anyone.

Growth of two-dimensional materials on hexagonal boron nitride (h-BN)

2018 ◽  
Vol 30 (3) ◽  
pp. 034003 ◽  
Author(s):  
Xinsheng Wang ◽  
Mongur Hossain ◽  
Zhongming Wei ◽  
Liming Xie
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Two Dimensional Materials

Two Dimensional Graphene/h-BCN Based Devices with Large Ion/Ioff Ratio for Digital Applications

2012 ◽  
Vol 77 ◽  
pp. 266-269 ◽  
Author(s):  
Gianluca Fiori ◽  
Samantha Bruzzone ◽  
Giuseppe Iannaccone
Keyword(s):  
Boron Nitride ◽  
Performance Assessment ◽  
Hexagonal Boron Nitride ◽  
Tight Binding ◽  
Atomic Scale ◽  
Planar Structure ◽  
Two Dimensional ◽  
Ab Initio Simulations ◽  
Multi Scale ◽  
Large Current

We present a performance assessment of graphene/hexagonal Boron Nitride heterojunctions based transistors able to provide large current modulation. The study is performed by means of a multi-scale approach leveraging ab-initio simulations to capture the physics at the atomic scale, and tight-binding simulations to compute transport. In particular, we focus on two technological solutions, a vertical and a planar structure both able to provide large Ion/Ioff ratios. As we will show, due to reduced capacitative coupling, the planar structure outperforms the vertical device as far as digital applications are concerned.

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