scholarly journals Rapid wafer-scale fabrication with layer-by-layer thickness control of atomically thin MoS2 films using gas-phase chemical vapor deposition

APL Materials ◽  
2019 ◽  
Vol 7 (8) ◽  
pp. 081113 ◽  
Author(s):  
Nitin Babu Shinde ◽  
Bellarmine Francis ◽  
M. S. Ramachandra Rao ◽  
Beo Deul Ryu ◽  
S. Chandramohan ◽  
...  
2011 ◽  
Vol 50 (6S) ◽  
pp. 06GE04 ◽  
Author(s):  
Ryota Negishi ◽  
Hiroki Hirano ◽  
Yasuhide Ohno ◽  
Kenzo Haehashi ◽  
Kazuhiko Matsumoto ◽  
...  

2012 ◽  
Vol 116 (19) ◽  
pp. 10557-10562 ◽  
Author(s):  
Zhancheng Li ◽  
Wenhua Zhang ◽  
Xiaodong Fan ◽  
Ping Wu ◽  
Changgan Zeng ◽  
...  

2011 ◽  
Vol 50 (6) ◽  
pp. 06GE04 ◽  
Author(s):  
Ryota Negishi ◽  
Hiroki Hirano ◽  
Yasuhide Ohno ◽  
Kenzo Haehashi ◽  
Kazuhiko Matsumoto ◽  
...  

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.


Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...


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