scholarly journals Increase of saturation current in unipolar field-effect transistor due to bulk electric conductance of organic semiconductor

AIP Advances ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 025313
Author(s):  
L. V. Govor ◽  
J. Parisi
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Saturation Current ◽  
Electric Conductance ◽  
Effect Transistor

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

scholarly journals Electrolyte-Gated Organic Field-Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

2016 ◽  
Vol 28 (46) ◽  
pp. 10311-10316 ◽  
Author(s):  
Francesca Leonardi ◽  
Stefano Casalini ◽  
Qiaoming Zhang ◽  
Sergi Galindo ◽  
Diego Gutiérrez ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Bio-organic-semiconductor-field-effect-transistor based on deoxyribonucleic acid gate dielectric

2006 ◽  
Vol 100 (2) ◽  
pp. 024514 ◽  
Author(s):  
Birendra Singh ◽  
Niyazi Serdar Sariciftci ◽  
James G. Grote ◽  
Frank K. Hopkins
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Deoxyribonucleic Acid ◽  
Gate Dielectric ◽  
Effect Transistor

scholarly journals An Improved 4H-SiC MESFET with a Partially Low Doped Channel

Micromachines ◽  
2019 ◽  
Vol 10 (9) ◽  
pp. 555 ◽  
Author(s):  
Hujun Jia ◽  
Yibo Tong ◽  
Tao Li ◽  
Shunwei Zhu ◽  
Yuan Liang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistor ◽  
Saturation Current ◽  
Absolute Value ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Absolute

An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (Vt), gate-source capacitance (Cgs) and saturation current (Id). The simulated results show that with the increase of H, the PAE of the device increases and then decreases when the value of NPLDC is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be NPLDC = 1 × 1015 cm−3 and H = 0.15 μm to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%.

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