Bio-organic-semiconductor-field-effect-transistor based on deoxyribonucleic acid gate dielectric

2006 ◽  
Vol 100 (2) ◽  
pp. 024514 ◽  
Author(s):  
Birendra Singh ◽  
Niyazi Serdar Sariciftci ◽  
James G. Grote ◽  
Frank K. Hopkins
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Deoxyribonucleic Acid ◽  
Gate Dielectric ◽  
Effect Transistor

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Nano Research ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 3421-3429 ◽  
Author(s):  
Nguyen Minh Triet ◽  
Tran Quang Trung ◽  
Nguyen Thi Dieu Hien ◽  
Saqib Siddiqui ◽  
Do-Il Kim ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Effect Transistor

Fabrication and Characteristics of a Field Effect Transistor-Type Charge Sensor for Detecting Deoxyribonucleic Acid Sequence

2003 ◽  
Vol 42 (Part 1, No. 6B) ◽  
pp. 4111-4115 ◽  
Author(s):  
Dong-Sun Kim ◽  
Yong-Taek Jeong ◽  
Hong-Kun Lyu ◽  
Hey-Jung Park ◽  
Hyoung Sik Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Deoxyribonucleic Acid ◽  
Effect Transistor
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