scholarly journals Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution

2019 ◽  
Vol 125 (7) ◽  
pp. 075703 ◽  
Author(s):  
Alexander Azarov ◽  
Bjørn L. Aarseth ◽  
Lasse Vines ◽  
Anders Hallén ◽  
Edouard Monakhov ◽  
...  
Keyword(s):  
Defect Annealing

Recombination enhanced defect annealing inn‐InP

1984 ◽  
Vol 45 (5) ◽  
pp. 566-568 ◽  
Author(s):  
J. L. Benton ◽  
M. Levinson ◽  
A. T. Macrander ◽  
H. Temkin ◽  
L. C. Kimerling
Keyword(s):  
Defect Annealing

Is Thermal and Light-Induced Annealing of Met Astable Defects in a-Si:H Driven by Electrons?

1995 ◽  
Vol 377 ◽  
Author(s):  
Helena Gleskova ◽  
S. Wagner
Keyword(s):  
Electrical Conductivity ◽  
Light Intensity ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Free Electrons ◽  
Free Electron Density ◽  
Independent Variables ◽  
The Third ◽  
Defect Annealing ◽  
Hydrogenated Amorphous

ABSTRACTWe report results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H). We tested the hypothesis that defect-annealing by both heating or illumination is driven by the density of free electrons. This hypothesis is formulated via the rate equation - dN/dt = A nα N f (T), where N is the defect density, t the time, A a constant, n the free electron density, and f (T) a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with a ranging from 0.39 to 0.76, but not the third set, where we varied the temperature.

Dynamic defect annealing during plastic deformation of Al

1978 ◽  
Vol 48 (2) ◽  
pp. K113-K114 ◽  
Author(s):  
E. Vlachá ◽  
B. Sprušil ◽  
P. Vostrý
Keyword(s):  
Plastic Deformation ◽  
Defect Annealing

Defect Annealing of InAs–InAlGaAs Quantum-Dash-in-Asymmetric-Well Laser

2006 ◽  
Vol 18 (22) ◽  
pp. 2329-2331 ◽  
Author(s):  
Hery S. Djie ◽  
Yang Wang ◽  
Boon S. Ooi ◽  
Dong-Ning Wang ◽  
James C. M. Hwang ◽  
...  
Keyword(s):  
Defect Annealing ◽  
Quantum Dash

Defect annealing in phosphorus implanted silicon: A D.L.T.S. study

1979 ◽  
Vol 18 (3) ◽  
pp. 275-278 ◽  
Author(s):  
J. Krynicki ◽  
J. C. Bourgoin
Keyword(s):  
Defect Annealing

Coarse-grained molecular dynamics modeling of the kinetics of lamellar block copolymer defect annealing

2016 ◽  
Vol 15 (1) ◽  
pp. 013508 ◽  
Author(s):  
Andrew J. Peters ◽  
Richard A. Lawson ◽  
Benjamin D. Nation ◽  
Peter J. Ludovice ◽  
Clifford L. Henderson
Keyword(s):  
Molecular Dynamics ◽  
Block Copolymer ◽  
Coarse Grained ◽  
Dynamics Modeling ◽  
Defect Annealing ◽  
Molecular Dynamics Modeling ◽  
Kinetics Of ◽  
Coarse Grained Molecular Dynamics

Recombination Enhanced Defect Annealing in 4H-SiC

2005 ◽  
pp. 369-372
Author(s):  
L. Storasta ◽  
F.H.C. Carlsson ◽  
J.Peder Bergman ◽  
Erik Janzén
Keyword(s):  
Defect Annealing

A study on defect annealing in GaAs nanostructures by ion beam irradiation

2020 ◽  
Vol 43 (1) ◽  
Author(s):  
Onkar Mangla ◽  
Savita Roy ◽  
S Annapoorni ◽  
K Asokan
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Defect Annealing

Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors

2017 ◽  
Vol 122 (11) ◽  
pp. 115701 ◽  
Author(s):  
Alexander Azarov ◽  
Augustinas Galeckas ◽  
Elke Wendler ◽  
Josef Ellingsen ◽  
Edouard Monakhov ◽  
...  
Keyword(s):  
Oxide Semiconductors ◽  
Defect Annealing ◽  
Ion Implanted
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