Defect Annealing of InAs–InAlGaAs Quantum-Dash-in-Asymmetric-Well Laser

2006 ◽  
Vol 18 (22) ◽  
pp. 2329-2331 ◽  
Author(s):  
Hery S. Djie ◽  
Yang Wang ◽  
Boon S. Ooi ◽  
Dong-Ning Wang ◽  
James C. M. Hwang ◽  
...  
1984 ◽  
Vol 45 (5) ◽  
pp. 566-568 ◽  
Author(s):  
J. L. Benton ◽  
M. Levinson ◽  
A. T. Macrander ◽  
H. Temkin ◽  
L. C. Kimerling
Keyword(s):  

1995 ◽  
Vol 377 ◽  
Author(s):  
Helena Gleskova ◽  
S. Wagner

ABSTRACTWe report results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H). We tested the hypothesis that defect-annealing by both heating or illumination is driven by the density of free electrons. This hypothesis is formulated via the rate equation - dN/dt = A nα N f (T), where N is the defect density, t the time, A a constant, n the free electron density, and f (T) a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with a ranging from 0.39 to 0.76, but not the third set, where we varied the temperature.


2019 ◽  
Vol 25 (6) ◽  
pp. 1-7 ◽  
Author(s):  
Youxin Mao ◽  
Jiaren Liu ◽  
Zhenguo Lu ◽  
Chunying Song ◽  
Philip J. Poole
Keyword(s):  

2019 ◽  
Vol 452 ◽  
pp. 355-359
Author(s):  
E. Alkhazraji ◽  
A. Ragheb ◽  
Q. Tareq ◽  
M.A. Esmail ◽  
H. Fathallah ◽  
...  

2013 ◽  
Vol 25 (22) ◽  
pp. 2221-2224 ◽  
Author(s):  
Jun Luo ◽  
Josue Parra-Cetina ◽  
Pascal Landais ◽  
Harm J. S. Dorren ◽  
Nicola Calabretta

2014 ◽  
Vol 50 (7) ◽  
pp. 534-536 ◽  
Author(s):  
S. Joshi ◽  
N. Chimot ◽  
L.A. Neto ◽  
A. Accard ◽  
J.‐G. Provost ◽  
...  

2012 ◽  
Vol 48 (10) ◽  
pp. 1327-1338 ◽  
Author(s):  
Ehsan Sooudi ◽  
Stylianos Sygletos ◽  
Andrew D. Ellis ◽  
Guillaume Huyet ◽  
John G. McInerney ◽  
...  

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