scholarly journals Focused ion beam and advanced electron microscopy for nano defect failure analysis of LED

2018 ◽  
Author(s):  
R. Gunawan ◽  
E. Sugiarti ◽  
Isnaeni ◽  
R. I. Purawiardi ◽  
H. Widodo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam

Magnetic Head Shorting Failure Analysis

2017 ◽  
Author(s):  
Liang Hong ◽  
Jia Li ◽  
Haifeng Wang
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Resistance Change ◽  
Root Cause ◽  
Transmission Electron ◽  
Root Cause Failure Analysis ◽  
Metal Layers

Abstract This paper provides an innovative root cause failure analysis method that combines multiple failure analysis (FA) techniques to narrow down and expose the shorting location and allow the material analysis of the shorting defect. It begins with a basic electrical testing to narrow down shorting metal layers, then utilizing mechanical lapping to expose over coat layers. This is followed by optical beam induced resistance change imaging to further narrow down the shorting location. Scanning electron microscopy and optical imaging are used together with focused ion beam milling to slice and view through the potential shorting area until the shorting defect is exposed. Finally, transmission electron microscopy (TEM) sample is prepared, and TEM analysis is carried out to pin point the root cause of the shorting. This method has been demonstrated successfully on Western Digital inter-metal layers shorting FA.

A Transmission X-ray Microscope (TXM) for Non-destructive 3D Imaging of ICs at Sub-100 nm Resolution

2002 ◽  
Author(s):  
Steve Wang ◽  
Frederick Duewer ◽  
Shashidar Kamath ◽  
Christopher Kelly ◽  
Alan Lyon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Process Development ◽  
Imaging System ◽  
Ion Beam ◽  
Layer By Layer ◽  
X Ray ◽  
Submicron Structures

Abstract Xradia has developed a laboratory table-top transmission x-ray microscope, TXM 54-80, that uses 5.4 keV x-ray radiation to nondestructively image buried submicron structures in integrated circuits with at better than 80 nm 2D resolution. With an integrated tomographic imaging system, a series of x-ray projections through a full IC stack, which may include tens of micrometers of silicon substrate and several layers of Cu interconnects, can be collected and reconstructed to produce a 3D image of the IC structure at 100 nm resolution, thereby allowing the user to detect, localize, and characterize buried defects without having to conduct layer by layer deprocessing and inspection that are typical of conventional destructive failure analysis. In addition to being a powerful tool for both failure analysis and IC process development, the TXM may also facilitate or supplant investigations using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and focused ion beam (FIB) tools, which generally require destructive sample preparation and a vacuum environment.

Failure Analysis of Tungsten Stud Defect from the CMP Process

2000 ◽  
Author(s):  
K. Takagi ◽  
Y. Kohno ◽  
S. Nukii
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Open Circuit ◽  
Physical Analysis ◽  
Metal Line ◽  
Cross Sectional ◽  
Defect Isolation

Abstract This paper describes a failure analysis that effectively combined multiple analytic techniques to find the cause of I/O leakage in a flawed chip produced for an OEM (Original Equipment Manufacturer) product. Internal probing was initially used for defect isolation and a Tungsten (W) stud open circuit flaw was isolated by electrical characterization with internal probing. SEM (Scanning Electron Microscopy), TEM (Transmission Electron Microscopy, and FE-AES (Field Emission Auger Electron Spectroscopy) analysis with FIB (Focused Ion Beam) preparation were used for physical analysis. Cross-sectional SEM and TEM observations showed a gap with foreign material (FM) between the bottom of the metal line and the top of the W stud, possibly from the W CMP (chemical mechanical polish) process. FE-AES is effective for the analysis of light materials and their chemical composition, so a flat milling FIB process was used to prepare a cross-section for FE-AES analysis of the FM and the interfaces of the open defect. The spectra showed that the FM was traceable to the W CMP process. From these analytical results and problem reproduction experiments in the W CMP process on the manufacturing line, the failure mechanism was identified.

Site Specific 2-D Implant Profiling Using FIB Assisted SCM

2002 ◽  
Author(s):  
Konrad Jarausch ◽  
John F. Richards ◽  
Lloyd Denney ◽  
Alex Guichard ◽  
Phillip E. Russell
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
Semiconductor Technology ◽  
Site Specific ◽  
Analysis Techniques ◽  
Profiling Techniques

Abstract Advances in semiconductor technology are driving the need for new metrology and failure analysis techniques. Failures due to missing, or misregistered implants are particularly difficult to resolve. Two-dimensional implant profiling techniques such as scanning capacitance microscopy (SCM) rely on polish preparation, which makes reliably targeting sub 0.25 um structures nearly impossible.[1] Focused ion beam (FIB) machining is routinely used to prepare site-specific cross-sections for electron microscopy inspection; however, FIB induced artifacts such as surface amorphization and Ga ion implantation render the surface incompatible with SCM (and selective etching techniques). This work describes a novel combination of FIB machining and polish preparation that allows for site-specific implant profiling using SCM.

scholarly journals Utilizing Focused Ion Beam (FIB) and Transmission Electron Microscopy (TEM) for Failure Analysis of Char Deposits Obtained From Space Shuttle Columbia Window Debris

2011 ◽  
Vol 17 (S2) ◽  
pp. 1762-1763 ◽  
Author(s):  
M Wright ◽  
R Christoffersen ◽  
Z Rahman ◽  
S McDanels
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Space Shuttle ◽  
Ion Beam ◽  
Transmission Electron ◽  
Space Shuttle Columbia

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Failure Analysis Using Voltage Contrast and Ebic

1998 ◽  
Vol 523 ◽  
Author(s):  
Larry Rice ◽  
Wei Chen
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sem Analysis ◽  
Silicon On Insulator ◽  
Traditional Use ◽  
Critical Dimensions ◽  
Voltage Contrast ◽  
Microscopy Techniques

AbstractAs ULSI device critical dimensions continue to shrink to submicron sizes, electron microscopy techniques such as electron beam induced current (EBIC) and voltage contrast are finding more applications towards pinpointing failure sites for subsequent cross sectioning or deprocessing. In addition to the traditional use of EBIC for junction delineation, EBIC has been applied to locate leakage sites in capacitor structures and silicon-on-insulator (SOI) devices as well. Similarly, voltage contrast has been applied to identify single or multiple opens in via chains which consist of thousands of vias. In addition to a brief revisit of the basic principles of EBIC and voltage contrast, focus will be placed on the application of EBIC and voltage contrast in failure analysis of semiconductor devices. Examples of using voltage contrast combined with precision cross section focused ion beam (XFIB) for identifying the failure mechanism of 0.8μm vias will be presented. Also, the use of EBIC for identifying leakage sites in SOI and bipolar devices and subsequent FIB/scanning electron microscopy (SEM) analysis will be presented.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

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