scholarly journals Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates

APL Materials ◽  
2018 ◽  
Vol 6 (12) ◽  
pp. 121110 ◽  
Author(s):  
Dae-Woo Jeon ◽  
Hoki Son ◽  
Jonghee Hwang ◽  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural Properties ◽  
Vapor Phase ◽  
Basal Plane ◽  
Deep Trap ◽  
Vapor Phase Epitaxy ◽  
Sapphire Substrates

Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates

2021 ◽  
Vol 129 (18) ◽  
pp. 185701
Author(s):  
Alexander Y. Polyakov ◽  
Vladimir I. Nikolaev ◽  
Sergey A. Tarelkin ◽  
Alexei I. Pechnikov ◽  
Sergey I. Stepanov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Vapor Phase ◽  
Deep Trap ◽  
Vapor Phase Epitaxy ◽  
P Type

Formation of in situ HVPE a-plane GaN nanodots: effects on the structural properties of a-plane GaN templates

CrystEngComm ◽  
2018 ◽  
Vol 20 (28) ◽  
pp. 4036-4041 ◽  
Author(s):  
Moonsang Lee ◽  
Mino Yang ◽  
Jung-Sub Wi ◽  
Sungsoo Park
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

In situ a-plane GaN nanodots were formed on r-plane sapphire substrates to obtain a-plane GaN layers by using hydride vapor phase epitaxy (HVPE).

scholarly journals Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices

2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Order Of Magnitude ◽  
Cost Efficient ◽  
Patterned Sapphire Substrates

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

scholarly journals Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 605 ◽  
Author(s):  
Chi-Tsung Tasi ◽  
Wei-Kai Wang ◽  
Tsung-Yen Tsai ◽  
Shih-Yung Huang ◽  
Ray-Hua Horng ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

2008 ◽  
Vol 57 (9) ◽  
pp. 5923
Author(s):  
Wang Lai ◽  
Zhang Xian-Peng ◽  
Xi Guang-Yi ◽  
Zhao Wei ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Halide Vapor Phase Epitaxy α‐ and ε‐Ga 2 O 3 Epitaxial Films Grown on Patterned Sapphire Substrates

2020 ◽  
Vol 217 (14) ◽  
pp. 1900892 ◽  
Author(s):  
Sevastian Shapenkov ◽  
Oleg Vyvenko ◽  
Evgeny Ubyivovk ◽  
Oleg Medvedev ◽  
Georgiy Varygin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Epitaxial Films ◽  
Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates
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