Structural properties of InN films grown on sapphire substrates by microwave‐excited metalorganic vapor‐phase epitaxy

1994 ◽  
Vol 75 (10) ◽  
pp. 4927-4932 ◽  
Author(s):  
Qi‐Xin Guo ◽  
Toshimi Yamamura ◽  
Akira Yoshida ◽  
Nobuo Itoh
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Sapphire Substrates

Raman spectra of indium nitride thin films grown by microwave‐excited metalorganic vapor phase epitaxy on (0001) sapphire substrates

1996 ◽  
Vol 69 (7) ◽  
pp. 937-939 ◽  
Author(s):  
Hyuk‐Joo Kwon ◽  
Yong‐Hyun Lee ◽  
Osamu Miki ◽  
Hirofumi Yamano ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Vapor Phase ◽  
Indium Nitride ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Sapphire Substrates

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP

1993 ◽  
Vol 48 (15) ◽  
pp. 11135-11143 ◽  
Author(s):  
R. Leonelli ◽  
C. A. Tran ◽  
J. L. Brebner ◽  
J. T. Graham ◽  
R. Tabti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy

2011 ◽  
Vol 26 (6) ◽  
pp. 775-780
Author(s):  
Xiuhua Wang ◽  
Shanshan Chen ◽  
Wei Lin ◽  
Shuping Li ◽  
Hangyang Chen ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Image Position

Abstract

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

1999 ◽  
Vol 85 (11) ◽  
pp. 7682-7688 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Tetsuya Takeuchi ◽  
Christian Wetzel ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy

2004 ◽  
Vol 273 (1-2) ◽  
pp. 63-67 ◽  
Author(s):  
Hairong Yuan ◽  
Soo Jin Chua ◽  
Zhonglin Miao ◽  
Jianrong Dong ◽  
Yanjun Wang
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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