Formation of in situ HVPE a-plane GaN nanodots: effects on the structural properties of a-plane GaN templates

CrystEngComm ◽  
2018 ◽  
Vol 20 (28) ◽  
pp. 4036-4041 ◽  
Author(s):  
Moonsang Lee ◽  
Mino Yang ◽  
Jung-Sub Wi ◽  
Sungsoo Park
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

In situ a-plane GaN nanodots were formed on r-plane sapphire substrates to obtain a-plane GaN layers by using hydride vapor phase epitaxy (HVPE).

scholarly journals Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices

2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Order Of Magnitude ◽  
Cost Efficient ◽  
Patterned Sapphire Substrates

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

CrystEngComm ◽  
2016 ◽  
Vol 18 (40) ◽  
pp. 7690-7695
Author(s):  
Seohwi Woo ◽  
Sangil Lee ◽  
Uiho Choi ◽  
Hyunjae Lee ◽  
Minho Kim ◽  
...  
Keyword(s):  
Chemical Reaction ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-separation from m-plane sapphire using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy (HVPE).

scholarly journals Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 605 ◽  
Author(s):  
Chi-Tsung Tasi ◽  
Wei-Kai Wang ◽  
Tsung-Yen Tsai ◽  
Shih-Yung Huang ◽  
Ray-Hua Horng ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy

2001 ◽  
Vol 188 (1) ◽  
pp. 473-476 ◽  
Author(s):  
V. Kirilyuk ◽  
P.R. Hageman ◽  
P.C.M. Christianen ◽  
W.H.M. Corbeek ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

2012 ◽  
Vol 360 ◽  
pp. 197-200 ◽  
Author(s):  
Rie Togashi ◽  
Toru Nagashima ◽  
Manabu Harada ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Gas Supply

Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

1996 ◽  
Vol 69 (2) ◽  
pp. 242-244 ◽  
Author(s):  
W. Götz ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
N. M. Johnson ◽  
R. J. Molnar
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electronic And Structural Properties

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

2006 ◽  
Vol 88 (24) ◽  
pp. 241914 ◽  
Author(s):  
D. Martin ◽  
J. Napierala ◽  
M. Ilegems ◽  
R. Butté ◽  
N. Grandjean
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Sapphire Substrates
Sign in / Sign up

Export Citation Format

Share Document