Electrically tunable quantum emitters in an ultrathin graphene–hexagonal boron nitride van der Waals heterostructure

2019 ◽  
Vol 114 (6) ◽  
pp. 062104 ◽  
Author(s):  
Alessio Scavuzzo ◽  
Shai Mangel ◽  
Ji-Hoon Park ◽  
Sanghyup Lee ◽  
Dinh Loc Duong ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Quantum Emitters

The Impact of Interlayer Rotation on Thermal Transport Across Graphene/Hexagonal Boron Nitride van der Waals Heterostructure

Nano Letters ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2634-2641 ◽  
Author(s):  
Weijun Ren ◽  
Yulou Ouyang ◽  
Pengfei Jiang ◽  
Cuiqian Yu ◽  
Jia He ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Thermal Transport ◽  
Hexagonal Boron Nitride ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
The Impact

scholarly journals Electrical Control of Quantum Emitters in a Van der Waals Heterostructure

2021 ◽  
Author(s):  
Simon White ◽  
Tieshan Yang ◽  
Nikolai Dontschuk ◽  
Chi Li ◽  
Zaiquan Xu ◽  
...  
Keyword(s):  
Information Science ◽  
Hexagonal Boron Nitride ◽  
Van Der Waals ◽  
Quantum Systems ◽  
Electrostatic Model ◽  
Electrical Control ◽  
Van Der Waals Heterostructure ◽  
Stable Quantum ◽  
Significant Attention ◽  
Quantum Emitters

Abstract Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies1, 2. Recently, hexagonal boron nitride (hBN) has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters3-7. However, the large band gap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in an hBN–graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark, and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behaviour. Finally, employing these devices we demonstrate a nearly-coherent source with linewidths of ~ 160 MHz. Our results enhance the potential of hBN for tunable solid state quantum emitters for the growing field of quantum information science.

scholarly journals Bottom‐Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity‐Stabilized Quantum Emitters

Small ◽  
2021 ◽  
pp. 2008062
Author(s):  
Yongliang Chen ◽  
Xiaoxue Xu ◽  
Chi Li ◽  
Avi Bendavid ◽  
Mika T. Westerhausen ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bottom Up ◽  
Boron Nitride Nanoparticles ◽  
Quantum Emitters
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