Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells

2019 ◽  
Vol 114 (5) ◽  
pp. 052101 ◽  
Author(s):  
Fedor Alexej Ketzer ◽  
Philipp Horenburg ◽  
Philipp Henning ◽  
Ernst Ronald Korn ◽  
Heiko Bremers ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Polarization ◽  
Anisotropic Strain

Optical polarization relaxation inInxGa1−xAs-based quantum wells: Evidence of the interface symmetry-reduction effect

1998 ◽  
Vol 58 (16) ◽  
pp. R10179-R10182 ◽  
Author(s):  
T. Guettler ◽  
A. L. C. Triques ◽  
L. Vervoort ◽  
R. Ferreira ◽  
Ph. Roussignol ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Symmetry Reduction ◽  
Optical Polarization ◽  
Reduction Effect

Coherent all-optical polarization switching based on exciton–exciton interactions in quantum wells

2001 ◽  
Vol 90 (3) ◽  
pp. 1077-1081 ◽  
Author(s):  
Eric J. Gansen ◽  
K. Jarasiunas ◽  
Scot A. Hawkins ◽  
Martin J. Stevens ◽  
Arthur L. Smirl
Keyword(s):  
Quantum Wells ◽  
Polarization Switching ◽  
Optical Polarization ◽  
All Optical ◽  
Exciton Interactions

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 334-340 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Optical Anisotropy ◽  
Optical Transition ◽  
Transition Probability ◽  
Device Fabrication ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Light Emitters ◽  
Novel Applications

AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to the perpendicular direction as the In composition increases. This is a property unique to semipolar QWs and enables, for example, to make cavity mirrors of laser diodes by cleavage. In this article, we describe the concept of semipolar planes and fabrication of high-quality epitaxial films for semipolar QWs. Furthermore, we discuss device fabrication and optical polarization anisotropy.

Visible Emission from a Dense Biexciton Gas in SiGe/Si Quantum Wells under External Anisotropic Strain

JETP Letters ◽  
2018 ◽  
Vol 107 (6) ◽  
pp. 358-363
Author(s):  
S. N. Nikolaev ◽  
V. S. Krivobok ◽  
V. S. Bagaev ◽  
E. E. Onishchenko ◽  
A. V. Novikov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Visible Emission ◽  
Anisotropic Strain

scholarly journals Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure

2016 ◽  
Vol 24 (16) ◽  
pp. 18176 ◽  
Author(s):  
Weiying Wang ◽  
Huimin Lu ◽  
Lei Fu ◽  
Chenguang He ◽  
Mingxing Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Polarization Degree ◽  
Optical Polarization

Ultrafast all-optical polarization switching in Bragg-spaced quantum wells at 80K

2007 ◽  
Vol 101 (4) ◽  
pp. 046101 ◽  
Author(s):  
W. J. Johnston ◽  
J. P. Prineas ◽  
Arthur L. Smirl
Keyword(s):  
Quantum Wells ◽  
Polarization Switching ◽  
Optical Polarization ◽  
All Optical

On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells

2015 ◽  
Vol 253 (1) ◽  
pp. 145-157 ◽  
Author(s):  
L. Schade ◽  
T. Wernicke ◽  
J. Rass ◽  
S. Ploch ◽  
M. Weyers ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Optical Polarization ◽  
Ingan Quantum Wells
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