On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells

2015 ◽  
Vol 253 (1) ◽  
pp. 145-157 ◽  
Author(s):  
L. Schade ◽  
T. Wernicke ◽  
J. Rass ◽  
S. Ploch ◽  
M. Weyers ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Optical Polarization ◽  
Ingan Quantum Wells

scholarly journals Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

2020 ◽  
Vol 257 (6) ◽  
pp. 2000016 ◽  
Author(s):  
Carsten Netzel ◽  
Veit Hoffmann ◽  
Jens W. Tomm ◽  
Felix Mahler ◽  
Sven Einfeldt ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Carrier Diffusion ◽  
Charge Carrier Diffusion ◽  
Ingan Quantum Wells

On the optical polarization properties of semipolar InGaN quantum wells

2011 ◽  
Vol 99 (5) ◽  
pp. 051103 ◽  
Author(s):  
L. Schade ◽  
U. T. Schwarz ◽  
T. Wernicke ◽  
J. Rass ◽  
S. Ploch ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Polarization ◽  
Ingan Quantum Wells

Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN

2010 ◽  
Vol 405 (7) ◽  
pp. 1857-1860 ◽  
Author(s):  
E.Y. Lin ◽  
C.Y. Chen ◽  
T.S. Lay ◽  
Z.X. Peng ◽  
T.Y. Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Optical Polarization ◽  
Ingan Quantum Wells

Lateral charge carrier diffusion in InGaN quantum wells

2012 ◽  
Vol 249 (3) ◽  
pp. 480-484 ◽  
Author(s):  
J. Danhof ◽  
H.-M. Solowan ◽  
U. T. Schwarz ◽  
A. Kaneta ◽  
Y. Kawakami ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Carrier Diffusion ◽  
Charge Carrier Diffusion ◽  
Ingan Quantum Wells

scholarly journals Back Cover: Lateral charge carrier diffusion in InGaN quantum wells. Status Solidi B 3/2012)

2012 ◽  
Vol 249 (3) ◽  
pp. n/a-n/a
Author(s):  
J. Danhof ◽  
H.-M. Solowan ◽  
U. T. Schwarz ◽  
A. Kaneta ◽  
Y. Kawakami ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Carrier Diffusion ◽  
Back Cover ◽  
Charge Carrier Diffusion ◽  
Ingan Quantum Wells

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

2010 ◽  
Vol 3 (1) ◽  
pp. 011003 ◽  
Author(s):  
Takashi Kyono ◽  
Yusuke Yoshizumi ◽  
Yohei Enya ◽  
Masahiro Adachi ◽  
Shinji Tokuyama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Green Laser ◽  
Optical Polarization ◽  
Polarization Characteristics ◽  
Ingan Quantum Wells

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells
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