Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations

2010 ◽  
Vol 96 (15) ◽  
pp. 151911 ◽  
Author(s):  
A. Atsushi Yamaguchi
Keyword(s):  
Quantum Wells ◽  
Theoretical Investigation ◽  
Optical Polarization

Optical polarization relaxation inInxGa1−xAs-based quantum wells: Evidence of the interface symmetry-reduction effect

1998 ◽  
Vol 58 (16) ◽  
pp. R10179-R10182 ◽  
Author(s):  
T. Guettler ◽  
A. L. C. Triques ◽  
L. Vervoort ◽  
R. Ferreira ◽  
Ph. Roussignol ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Symmetry Reduction ◽  
Optical Polarization ◽  
Reduction Effect

Theoretical investigation of impurity scattering limited mobility in quantum wells: The influence of wave‐function modeling

1993 ◽  
Vol 73 (1) ◽  
pp. 233-238 ◽  
Author(s):  
J. L. Thobel ◽  
L. Baudry ◽  
F. Dessenne ◽  
M. Charef ◽  
R. Fauquembergue
Keyword(s):  
Wave Function ◽  
Quantum Wells ◽  
Theoretical Investigation ◽  
Impurity Scattering ◽  
Limited Mobility

Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells

2019 ◽  
Vol 114 (5) ◽  
pp. 052101 ◽  
Author(s):  
Fedor Alexej Ketzer ◽  
Philipp Horenburg ◽  
Philipp Henning ◽  
Ernst Ronald Korn ◽  
Heiko Bremers ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Polarization ◽  
Anisotropic Strain

Coherent all-optical polarization switching based on exciton–exciton interactions in quantum wells

2001 ◽  
Vol 90 (3) ◽  
pp. 1077-1081 ◽  
Author(s):  
Eric J. Gansen ◽  
K. Jarasiunas ◽  
Scot A. Hawkins ◽  
Martin J. Stevens ◽  
Arthur L. Smirl
Keyword(s):  
Quantum Wells ◽  
Polarization Switching ◽  
Optical Polarization ◽  
All Optical ◽  
Exciton Interactions

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 334-340 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Optical Anisotropy ◽  
Optical Transition ◽  
Transition Probability ◽  
Device Fabrication ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Light Emitters ◽  
Novel Applications

AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to the perpendicular direction as the In composition increases. This is a property unique to semipolar QWs and enables, for example, to make cavity mirrors of laser diodes by cleavage. In this article, we describe the concept of semipolar planes and fabrication of high-quality epitaxial films for semipolar QWs. Furthermore, we discuss device fabrication and optical polarization anisotropy.

scholarly journals Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure

2016 ◽  
Vol 24 (16) ◽  
pp. 18176 ◽  
Author(s):  
Weiying Wang ◽  
Huimin Lu ◽  
Lei Fu ◽  
Chenguang He ◽  
Mingxing Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Polarization Degree ◽  
Optical Polarization
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