scholarly journals Pulsed DC bias for the study of negative-ion production on surfaces of insulating materials in low pressure hydrogen plasmas

2019 ◽  
Vol 125 (3) ◽  
pp. 033303 ◽  
Author(s):  
K. Achkasov ◽  
R. Moussaoui ◽  
D. Kogut ◽  
E. Garabedian ◽  
J. M. Layet ◽  
...  
Keyword(s):  
Low Pressure ◽  
Negative Ion ◽  
Insulating Materials ◽  
Hydrogen Plasmas ◽  
Pulsed Dc ◽  
Ion Production ◽  
Dc Bias ◽  
Pressure Hydrogen

Global model analysis of negative ion generation in low-pressure inductively coupled hydrogen plasmas with bi-Maxwellian electron energy distributions

2015 ◽  
Vol 22 (3) ◽  
pp. 033506 ◽  
Author(s):  
Sung-Ryul Huh ◽  
Nam-Kyun Kim ◽  
Bong-Ki Jung ◽  
Kyoung-Jae Chung ◽  
Yong-Seok Hwang ◽  
...  
Keyword(s):  
Electron Energy ◽  
Low Pressure ◽  
Model Analysis ◽  
Global Model ◽  
Negative Ion ◽  
Energy Distributions ◽  
Inductively Coupled ◽  
Hydrogen Plasmas ◽  
Ion Generation

Negative ion production in hydrogen plasmas confined by a multicusp magnetic field

1984 ◽  
Vol 55 (1) ◽  
pp. 15-24 ◽  
Author(s):  
M. Bacal ◽  
A. M. Bruneteau ◽  
M. Nachman
Keyword(s):  
Magnetic Field ◽  
Negative Ion ◽  
Hydrogen Plasmas ◽  
Ion Production

AlN Etching under ICP Cl2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model

MRS Advances ◽  
2019 ◽  
Vol 4 (27) ◽  
pp. 1579-1587
Author(s):  
Mohammad Rammal ◽  
Ahmed Rhallabi ◽  
Delphine Néel ◽  
Dalila Make ◽  
Alexandre Shen ◽  
...  
Keyword(s):  
Electron Density ◽  
Density Ratio ◽  
Flux Ratio ◽  
Laser Cavity ◽  
Low Pressure ◽  
Negative Ion ◽  
Ion Density ◽  
Dc Bias ◽  
Ar Plasma ◽  
Atomic Chlorine

AbstractAlN etching with chloride plasmas is studied. The experimental results show that the etching of AlN under a low pressure Cl2/Ar plasma mixture in moderate DC bias is not possible. The addition of BCl3 gas to Cl2/Ar mixture allows the etching of AlN materials. However the obtained properties of etched AlN is still not in conformity with the technological specification especially for the condition which the etched AlN must be kept only along the sidewall of the InP laser cavity and be removed elsewhere (selective etching). To know more about the effect of the BCl3 addition to the Cl2/Ar plasma mixture, global model of BCl3/Cl2/Ar is developed to quantify the neutral and ion densities as well as the electron density and temperature. The simulation results show that the electron density and low pressure linearly varies with the RF power. The negative ion density decreases with the percentage of BCl3 leading to the diminution of the electronegativity which is represented by negative ion to electron density ratio. The simulation shows that the positive ion to atomic chlorine flux ratio increases with the %BCl3. Such parameters could play an important role in the ion neutral synergy during the etching process.

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