Scanning probe microscopy and potentiometry using a junction field effect transistor based sensor

2018 ◽  
Vol 113 (22) ◽  
pp. 223101
Author(s):  
Paul Graf ◽  
Meike Flebbe ◽  
Stephanie Hoepken ◽  
Detlef Utzat ◽  
Hermann Nienhaus ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Effect Transistor

A silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy

2008 ◽  
Vol 79 (8) ◽  
pp. 083703 ◽  
Author(s):  
Akinobu Yamaguchi ◽  
Hiromasa Saito ◽  
Masayoshi Shimizu ◽  
Hideki Miyajima ◽  
Satoru Matsumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Hall Probe ◽  
Probe Microscopy ◽  
Effect Transistor ◽  
Scanning Hall Probe Microscopy

Novel Dynamic Scanning Microscope Probe and its Application to Local Electrical Measurement in an Ion Sensitive Field Effect Transistor

2004 ◽  
Vol 838 ◽  
Author(s):  
T. Akiyama ◽  
K. Suter ◽  
N. F. de Rooij ◽  
U. Staufer
Keyword(s):  
Scanning Probe Microscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quartz Tuning Fork ◽  
External Source ◽  
Electrical Measurement ◽  
Scanning Microscope ◽  
Source Current ◽  
Effect Transistor ◽  
Dynamic Scanning

ABSTRACTA unique self-actuating and self-sensing probe, which is based on a quartz tuning fork and a microfabricated cantilever, is presented for dynamic scanning probe microscopy. The probing tip can be electrically connected to an external source or measure unit. The sensitivity of the drain-source current of an ion sensitive field effect transistor (ISFET) was investigated as a function of the probe position in order to assess the potential of the probe in device testing, where its non-optical read-out mechanism may proof to be a particular advantage.

scholarly journals Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor

2017 ◽  
Vol 179 ◽  
pp. 33-40 ◽  
Author(s):  
A.S. Trifonov ◽  
D.E. Presnov ◽  
I.V. Bozhev ◽  
D.A. Evplov ◽  
V. Desmaris ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Measurements ◽  
Scanning Probe ◽  
Probe Technique ◽  
Effect Transistor ◽  
Electric Field Measurements

A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si

Micron ◽  
2017 ◽  
Vol 101 ◽  
pp. 197-205
Author(s):  
Kumjae Shin ◽  
Hoontaek Lee ◽  
Min Sung ◽  
Sang hoon Lee ◽  
Hyunjung Shin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Scanning Probe ◽  
Ion Damage ◽  
Effect Transistor

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor
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