scholarly journals Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors

APL Materials ◽  
2019 ◽  
Vol 7 (2) ◽  
pp. 022501 ◽  
Author(s):  
Junghwan Kim ◽  
Joonho Bang ◽  
Nobuhiro Nakamura ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Wide Bandgap ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

2006 ◽  
Vol 45 (5B) ◽  
pp. 4303-4308 ◽  
Author(s):  
Kenji Nomura ◽  
Akihiro Takagi ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

Thin Film Transistors with Ink-Jet Printed Amorphous Oxide Semiconductors

2010 ◽  
Vol 49 (5) ◽  
pp. 05EB06 ◽  
Author(s):  
Dongjo Kim ◽  
Youngmin Jeong ◽  
Chang Young Koo ◽  
Keunkyu Song ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Ink Jet

Bilayer BaSnO3 thin film transistors on silicon substrates

2020 ◽  
Vol 8 (15) ◽  
pp. 5231-5238
Author(s):  
Wenhan Du ◽  
Anh Chien Nguyen ◽  
Rohit Abraham John ◽  
Jing Jing Yang ◽  
Mohit Rameshchandra Kulkarni ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Wide Bandgap ◽  
Silicon Substrates ◽  
High Electron ◽  
Oxide Semiconductors ◽  
Promising Alternative ◽  
High Electron Mobility ◽  
Semiconducting Material

Barium tin oxide BaSnO3 (BSO) is a novel wide-bandgap semiconducting material with high electron mobility and is considered as a promising alternative to indium-containing amorphous oxide semiconductors.

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Nature ◽  
2004 ◽  
Vol 432 (7016) ◽  
pp. 488-492 ◽  
Author(s):  
Kenji Nomura ◽  
Hiromichi Ohta ◽  
Akihiro Takagi ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

scholarly journals Gate-bias stress in amorphous oxide semiconductors thin-film transistors

2009 ◽  
Vol 95 (6) ◽  
pp. 063502 ◽  
Author(s):  
M. E. Lopes ◽  
H. L. Gomes ◽  
M. C. R. Medeiros ◽  
P. Barquinha ◽  
L. Pereira ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Bias ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Bias Stress ◽  
Gate Bias Stress
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