scholarly journals Measurement of the non-radiative minority recombination lifetime and the effective radiative recombination coefficient in GaAs

AIP Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 045034 ◽  
Author(s):  
M. Niemeyer ◽  
P. Kleinschmidt ◽  
A. W. Walker ◽  
L. E. Mundt ◽  
C. Timm ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Recombination Coefficient ◽  
Recombination Lifetime

scholarly journals On Optical Dipole Moment and Radiative Recombination Lifetime of Excitons in WSe2

2016 ◽  
Vol 27 (19) ◽  
pp. 1601741 ◽  
Author(s):  
Chenhao Jin ◽  
Jonghwan Kim ◽  
Kedi Wu ◽  
Bin Chen ◽  
Edward S. Barnard ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Radiative Recombination ◽  
Recombination Lifetime

scholarly journals Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications

2003 ◽  
Vol 763 ◽  
Author(s):  
R. J. Kumar ◽  
R. J. Gutmann ◽  
J.M. Borrego ◽  
P. S. Dutta ◽  
C. A. Wang ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Radiative Recombination ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Recombination Coefficient ◽  
Epitaxial Layers ◽  
Capping Layer ◽  
One Dimensional ◽  
Recombination Velocity

AbstractRadio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameters and surface recombination velocity (SRV) in doubly-capped 0.55-eV p-InGaAsSb epitaxial layers, doped at 2 × 1017 cm-3, for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90 to 100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 × 10-11 cm3/s and Auger coefficient (C) of 1 × 10-28 cm6/s.

Radiative recombination lifetime measurements of InGaN single quantum well

1996 ◽  
Vol 69 (13) ◽  
pp. 1936-1938 ◽  
Author(s):  
C.‐K. Sun ◽  
S. Keller ◽  
G. Wang ◽  
M. S. Minsky ◽  
J. E. Bowers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lifetime Measurements ◽  
Recombination Lifetime

Temperature dependence of the radiative recombination coefficient in silicon

1974 ◽  
Vol 21 (1) ◽  
pp. 357-367 ◽  
Author(s):  
H. Schlangenotto ◽  
H. Maeder ◽  
W. Gerlach
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Coefficient

Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

2003 ◽  
Vol 94 (8) ◽  
pp. 4930 ◽  
Author(s):  
T. Trupke ◽  
M. A. Green ◽  
P. Würfel ◽  
P. P. Altermatt ◽  
A. Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Recombination Coefficient

Tunable Exciton Radiative Recombination Lifetime in Twisted Bilayer Molybdenum Disulfide

2020 ◽  
Vol 124 (38) ◽  
pp. 21123-21128
Author(s):  
Zhida Gao ◽  
Yuanshuang Liu ◽  
Huan Liu ◽  
Cuicui Qiu ◽  
Shaomei Zheng ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Radiative Recombination ◽  
Recombination Lifetime

Spontaneous Radiation Energy of Current Filaments in GaAs Photoconductive Semiconductor Switches

2013 ◽  
Vol 423-426 ◽  
pp. 2659-2662
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Hong Jun Yang ◽  
Wei Yang ◽  
Yong Lin Zheng
Keyword(s):  
Radiative Recombination ◽  
Physical Method ◽  
Radiation Energy ◽  
High Gain ◽  
Recombination Coefficient ◽  
Radiation Wavelength ◽  
Spontaneous Radiation ◽  
Semiconductor Switches ◽  
Optical Output ◽  
Current Filaments

The spontaneous radiation energy of the current filaments in high gain GaAs photoconductive semiconductor switches (PCSS) is quantificationally analyzed. The spontaneous radiation formula of the current filaments was derived. The concept of the distribution function of the radiation intensity dependent on radiation wavelength was first introduced in GaAs samples. The radiative recombination coefficients of four peak wavelengths were estimated by the statistical-physical method in high gain GaAs PCSS. Calculated according to the radiative recombination coefficient of 890 nm radiation, the spontaneous radiation energies are consistent with the experimental observations. This explains the observations about optical output energy versus filament current.

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