scholarly journals On Optical Dipole Moment and Radiative Recombination Lifetime of Excitons in WSe2

2016 ◽  
Vol 27 (19) ◽  
pp. 1601741 ◽  
Author(s):  
Chenhao Jin ◽  
Jonghwan Kim ◽  
Kedi Wu ◽  
Bin Chen ◽  
Edward S. Barnard ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Radiative Recombination ◽  
Recombination Lifetime

Radiative recombination lifetime measurements of InGaN single quantum well

1996 ◽  
Vol 69 (13) ◽  
pp. 1936-1938 ◽  
Author(s):  
C.‐K. Sun ◽  
S. Keller ◽  
G. Wang ◽  
M. S. Minsky ◽  
J. E. Bowers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lifetime Measurements ◽  
Recombination Lifetime

Tunable Exciton Radiative Recombination Lifetime in Twisted Bilayer Molybdenum Disulfide

2020 ◽  
Vol 124 (38) ◽  
pp. 21123-21128
Author(s):  
Zhida Gao ◽  
Yuanshuang Liu ◽  
Huan Liu ◽  
Cuicui Qiu ◽  
Shaomei Zheng ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Radiative Recombination ◽  
Recombination Lifetime

scholarly journals Излучательная рекомбинация, захват носителей заряда на ловушки и релаксация фототока в PbSnTe : In с составом вблизи инверсии зон

2018 ◽  
Vol 52 (7) ◽  
pp. 694
Author(s):  
Д.В. Ищенко ◽  
И.Г. Неизвестный
Keyword(s):  
Experimental Data ◽  
Fermi Level ◽  
Wavelength Range ◽  
Radiative Recombination ◽  
Recombination Lifetime ◽  
Disordered Structure ◽  
Wide Wavelength Range ◽  
High Photosensitivity

AbstractBased on the notions that PbSnTe:In is a direct-gap semiconductor, the radiative-recombination lifetime is calculated, and the photocurrent relaxation and dependences of the instantaneous electron and hole lifetime are calculated under the assumption that PbSnTe:In is a disordered structure containing capture centers. These calculations explain such experimentally observed peculiarities of PbSnTe:In as a high photosensitivity in a wide wavelength range, pinning of the Fermi level, and long-term photocurrent relaxation. Calculations are also compared with experimental data and the possible parameters of photodetectors are evaluated.

Effects of Dimensionality on Radiative Recombination Lifetime of Excitons in Thin Quantum Boxes of Intermediate Regime between Zero and Two Dimensions

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4204-4208 ◽  
Author(s):  
Hideki Gotoh ◽  
Hiroaki Ando ◽  
Toshihide Takagahara ◽  
Hidehiko Kamada ◽  
Arturo Chavez-Pirson ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Two Dimensions ◽  
Recombination Lifetime ◽  
Intermediate Regime

scholarly journals Measurement of the non-radiative minority recombination lifetime and the effective radiative recombination coefficient in GaAs

AIP Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 045034 ◽  
Author(s):  
M. Niemeyer ◽  
P. Kleinschmidt ◽  
A. W. Walker ◽  
L. E. Mundt ◽  
C. Timm ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Recombination Coefficient ◽  
Recombination Lifetime

Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells

2004 ◽  
Vol 831 ◽  
Author(s):  
Mitsuru Funato ◽  
Koji Nishizuka ◽  
Yoichi Kawakami ◽  
Yukio Narukawa ◽  
Takashi Mukai
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum ◽  
Photoluminescence Intensity ◽  
Growth Technique ◽  
Recombination Lifetime ◽  
Piezoelectric Fields

ABSTRACTInGaN/GaN multiple quantum wells (MQWs) with [0001], <11.2>, and <11.0> orientations have been fabricated by means of the re-growth technique on patterned GaN templates with striped geometry, normal planes of which are (0001) and {11.0}, on sapphire (0001) substrates. It was found that photoluminescence intensity of the {11.2} QW is the strongest among the three QWs, and its internal quantum efficiency was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {11.2} QW was about 0.39 ns at 14 K, which was 3.8 times shorter than that of conventional c-oriented QWs emitting at a similar wavelength. These findings are well explained by the high internal quantum efficiency in the {11.2} QW owing to the suppression of piezoelectric fields.

Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
Yong-Hoon Cho ◽  
T. J. Schmidt ◽  
S. Bidnyk ◽  
J.J. Song ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Doping Concentration ◽  
Stokes Shift ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Recombination Lifetime ◽  
Si Doping

AbstractWe have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0.1 -μm-thick Al0.07Ga0.93N capping layer. The Si doping level in the GaN barriers was varied from 1 × 1017 to 3 × 1019 cm3. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease with increasing Si doping concentration (n), from ∼ 30 ns (for n < 1 × 1017 cm-3) to ∼4 ns (for n = 3 x 1019 cm-3). To elucidate whether non-radiative recombination processes affect the measured lifetime, the temperature-dependence of the measured lifetime was investigated. The reduced Stokes shift, the decrease in radiative recombination lifetime, and the increase in structural and interface quality with increasing Si doping indicate that the incorporation of Si in the GaN barriers results in a decrease in carrier localization at potential fluctuations in the InGaN active regions and the interfaces.

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