Dielectric Properties of Pulsed Laser Deposited SrTiO3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
A. M. Clark ◽  
Jianhua Hao ◽  
Weidong Si ◽  
X. X. Xi

AbstractLow frequency dielectric loss and nonlinearity in pulsed laser deposited SrTiO3 thin films were studied. A low loss tangent in the order of 10−4, close to the level found in SrTiO3 single crystals, was observed. Combined with a large tunability, this resulted in a figure of merit for frequency and phase agile materials that can rival that observed in single crystals. The SrTiO3 thin films with thickness ranging from 25 nm to 2.5μ1 were grown on SrRuO3 electrode layers. The loss depends strongly on the thickness, but differently above and below T ∼ 80 K. Our result suggests that, in the high temperature regime, the interfacial dead layer effect dominates while, in the low temperature regime, the losses related to the structural phase transition and quantum fluctuations are important. The effect of interfacial potential was studied by using different electrode materials that result in different Schottky barriers.

1994 ◽  
Vol 48 (6) ◽  
pp. 733-736 ◽  
Author(s):  
N. T. McDevitt ◽  
J. S. Zabinski ◽  
M. S. Donley ◽  
J. E. Bultman

Crystalline disorder in thin films plays an important role in determining their properties. Disorder in the crystal structure of MoS2 films prepared by magnetron sputtering and pulsed laser deposition was evaluated with the use of Raman spectroscopy. The peak positions and bandwidths of the first-order Raman bands, in the region 100 to 500 cm−1, were used as a measure of crystalline order. In addition, a low-frequency feature was observed at 223 cm−1 that is not part of the normal first-order spectrum of a fully crystalline specimen. Data presented here demonstrate that this band is characteristic of crystalline disorder, and its intensity depends on the annealing history of the film. This behavior seems to be analogous to the disorder found in graphite thin films.


2000 ◽  
Vol 623 ◽  
Author(s):  
R.K. Soni ◽  
Anju Dixit ◽  
R. S. Katiyar ◽  
A. Pignolet ◽  
K.M. Satyalakshmi ◽  
...  

AbstractLight scattering investigations are carried out on BaBi4Ti4O15 (BBiT) which is a member of the Bi-layer structure ferroelectric oxide with n = 4. The BBiT thin films, thickness ∼ 300 nm, were grown on epitaxial conducting LaNiO3 electrodes on epitaxial buffer layers on (100) silicon by pulsed laser deposition. Micro-Raman measurements performed on these films reveal a sharp low-frequency mode at 51 cm−1 along with broad highfrequeficy modes corresponding to other lattice vibrations including TiO6 octahedra. No temperature dependence of the low frequency mode is seen while a weak dependence of the broad high frequency vibrations are observed in the mixed oriented regions. Raman polarization carried out at room temperature indicates that the prominent modes have Alg and Eg symmetries in the BaBi4Ti4O15 thin films.


2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Yaodong Yang ◽  
Zhiguang Wang ◽  
Jie-Fang Li ◽  
D. Viehland

We have studied the deposition of BaTiO3(BTO) thin films on various substrates. Three representative substrates were selected from different types of material systems: (i) SrTiO3single crystals as a typical oxide, (ii) Si wafers as a semiconductor, and (iii) Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.


2001 ◽  
Vol 688 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg

AbstractThin film capacitors with structures Au/Ba0.5Sr0.5TiO3/SrRuO3 were fabricated by pulsed laser deposition onto {001}-oriented MgO single crystal substrates. As part of an overall programme to investigate the so-called ‘dead-layer’ effect, polarisation loops were taken from the capacitors and analysed as a function of BST film thickness. Analysis was done within a Landau-Ginzburg-Devonshire (LGD) framework, and showed that for film thickness greater than ∼100nm, changes in the dielectric behaviour of the BST were dominated more by epitaxial mismatch strain, than by the conventional notion of the dead-layer.


2013 ◽  
Vol 7 (4) ◽  
pp. 293-296 ◽  
Author(s):  
Jr-Sheng Tian ◽  
Chun-Yen Peng ◽  
Wei-Lin Wang ◽  
Yue-Han Wu ◽  
Yi-Sen Shih ◽  
...  

2016 ◽  
Vol 27 (8) ◽  
pp. 7947-7952 ◽  
Author(s):  
Baogang Ma ◽  
Shihui Yu ◽  
Shengtian Chen ◽  
Jieling Zhang ◽  
Xiushi Huang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document