scholarly journals Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices

2018 ◽  
Vol 124 (13) ◽  
pp. 135501 ◽  
Author(s):  
S. Altazin ◽  
C. Kirsch ◽  
E. Knapp ◽  
A. Stous ◽  
B. Ruhstaller
Keyword(s):  
Charge Transport ◽  
Diffusion Model ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Organic Semiconductor Devices

An existence result for a class of electrothermal drift-diffusion models with Gauss–Fermi statistics for organic semiconductors

2020 ◽  
pp. 1-30 ◽  
Author(s):  
Annegret Glitzky ◽  
Matthias Liero ◽  
Grigor Nika
Keyword(s):  
Heat Equation ◽  
Diffusion Model ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Solution Concept ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Fermi Statistics ◽  
Organic Semiconductor Devices

This work is concerned with the analysis of a drift-diffusion model for the electrothermal behavior of organic semiconductor devices. A “generalized Van Roosbroeck” system coupled to the heat equation is employed, where the former consists of continuity equations for electrons and holes and a Poisson equation for the electrostatic potential, and the latter features source terms containing Joule heat contributions and recombination heat. Special features of organic semiconductors like Gauss–Fermi statistics and mobility functions depending on the electric field strength are taken into account. We prove the existence of solutions for the stationary problem by an iteration scheme and Schauder’s fixed point theorem. The underlying solution concept is related to weak solutions of the Van Roosbroeck system and entropy solutions of the heat equation. Additionally, for data compatible with thermodynamic equilibrium, the uniqueness of the solution is verified. It was recently shown that self-heating significantly influences the electronic properties of organic semiconductor devices. Therefore, modeling the coupled electric and thermal responses of organic semiconductors is essential for predicting the effects of temperature on the overall behavior of the device. This work puts the electrothermal drift-diffusion model for organic semiconductors on a sound analytical basis.

scholarly journals A Fractional Drift Diffusion Model for Organic Semiconductor Devices

2021 ◽  
Vol 69 (1) ◽  
pp. 237-266
Author(s):  
Yi Yang ◽  
Robert A. Nawrocki ◽  
Richard M. Voyles ◽  
Haiyan H. Zhang
Keyword(s):  
Diffusion Model ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Organic Semiconductor Devices

Multicomponent Model of Charge Transport in Quantum Semiconductor Devices

2021 ◽  
Vol 23 (1) ◽  
pp. 24-31
Author(s):  
I.A. Obukhov ◽  
Keyword(s):  
Charge Transport ◽  
Diffusion Model ◽  
Semiconductor Devices ◽  
Optoelectronic Devices ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Classical Approximation ◽  
Quasi Classical Approximation ◽  
Quantum Semiconductor ◽  
Multicomponent Model

A model that allows taking into account the influence of quantum and non-equilibrium effects to the characteristics of semiconductor devices is presented. The model was successfully used for calculation the characteristics of resonant-tun-neling diodes, electronic, thermionic and optoelectronic devices based on nanowires. In a quasi-classical approximation it goes into a drift-diffusion model.

scholarly journals Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 301-305 ◽  
Author(s):  
D. Vasileska ◽  
W. J. Gross ◽  
V. Kafedziski ◽  
D. K. Ferry
Keyword(s):  
Numerical Modeling ◽  
Numerical Solution ◽  
Diffusion Model ◽  
Semiconductor Devices ◽  
Semiconductor Technology ◽  
Electron Current ◽  
Drift Diffusion Model ◽  
Convergence Properties ◽  
Drift Diffusion ◽  
Continuity Equations

As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.

scholarly journals Drift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices

2020 ◽  
Vol 19 (3) ◽  
pp. 1164-1174 ◽  
Author(s):  
Duy Hai Doan ◽  
Axel Fischer ◽  
Jürgen Fuhrmann ◽  
Annegret Glitzky ◽  
Matthias Liero
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Drift Diffusion ◽  
Current Voltage ◽  
Organic Semiconductor Devices ◽  
Diffusion Simulation
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