scholarly journals Nonequilibrium drift-diffusion model for organic semiconductor devices

2016 ◽  
Vol 94 (3) ◽  
Author(s):  
Nikolaos Felekidis ◽  
Armantas Melianas ◽  
Martijn Kemerink
2020 ◽  
pp. 1-30 ◽  
Author(s):  
Annegret Glitzky ◽  
Matthias Liero ◽  
Grigor Nika

This work is concerned with the analysis of a drift-diffusion model for the electrothermal behavior of organic semiconductor devices. A “generalized Van Roosbroeck” system coupled to the heat equation is employed, where the former consists of continuity equations for electrons and holes and a Poisson equation for the electrostatic potential, and the latter features source terms containing Joule heat contributions and recombination heat. Special features of organic semiconductors like Gauss–Fermi statistics and mobility functions depending on the electric field strength are taken into account. We prove the existence of solutions for the stationary problem by an iteration scheme and Schauder’s fixed point theorem. The underlying solution concept is related to weak solutions of the Van Roosbroeck system and entropy solutions of the heat equation. Additionally, for data compatible with thermodynamic equilibrium, the uniqueness of the solution is verified. It was recently shown that self-heating significantly influences the electronic properties of organic semiconductor devices. Therefore, modeling the coupled electric and thermal responses of organic semiconductors is essential for predicting the effects of temperature on the overall behavior of the device. This work puts the electrothermal drift-diffusion model for organic semiconductors on a sound analytical basis.


2021 ◽  
Vol 69 (1) ◽  
pp. 237-266
Author(s):  
Yi Yang ◽  
Robert A. Nawrocki ◽  
Richard M. Voyles ◽  
Haiyan H. Zhang

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 301-305 ◽  
Author(s):  
D. Vasileska ◽  
W. J. Gross ◽  
V. Kafedziski ◽  
D. K. Ferry

As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.


2020 ◽  
Vol 19 (3) ◽  
pp. 1164-1174 ◽  
Author(s):  
Duy Hai Doan ◽  
Axel Fischer ◽  
Jürgen Fuhrmann ◽  
Annegret Glitzky ◽  
Matthias Liero

Sign in / Sign up

Export Citation Format

Share Document