Growth of thin film containing high density ZnO nanorods with low temperature calcinated seed layer

2018 ◽  
Author(s):  
Rudrashish Panda ◽  
Rudranarayan Samal ◽  
Lizina Khatua ◽  
Susanta Kumar Das
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Seed Layer ◽  
Zno Nanorods ◽  
High Density

Low-temperature synthesis of ZnO nanorods using organic–inorganic composite as a seed layer

2012 ◽  
Vol 520 (13) ◽  
pp. 4291-4296 ◽  
Author(s):  
Naoyuki Ueno ◽  
Kouji Nakanishi ◽  
Toshiaki Ohta ◽  
Yasuyuki Egashira ◽  
Norikazu Nishiyama
Keyword(s):  
Low Temperature ◽  
Seed Layer ◽  
Zno Nanorods ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Inorganic Composite

Growth of Large Grain Polycrystalline Silicon Thin Film on Soda-lime Glass at Low Temperature for Solar Cell Applications

2011 ◽  
Vol 1321 ◽  
Author(s):  
K. Wang ◽  
K. H. Wong
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Low Temperature ◽  
Thin Film Solar Cell ◽  
Seed Layer ◽  
Polycrystalline Silicon ◽  
Soda Lime ◽  
Absorber Layer ◽  
Soda Lime Glass ◽  
Si Thin Film

ABSTRACTHigh quality polycrystalline silicon (poly-Si) thin film solar cell was successfully fabricated on soda-lime glass substrates by electron beam (Ebeam) evaporation at low processing temperature. The initial poly-Si seed layer (p+-type 0.5 μm thick) was grown via the aluminum induced crystallization (AIC) method at 450 °C. Prominent interdiffusion and Si crystallization have been observed. X-ray diffraction (XRD) shows that (111) is the dominating crystalline orientation. Post annealing at 450 °C for six hours has produced densely packed Si grains with dimension of more than 10 μm in the plane of the film. Non-destructive Raman spectroscopy reveals the remarkable crystalline improvement for samples after thermal treatment. After removing the top diffused Al by chemical means, an absorber layer (p-type) of 0.9 μm thick was subsequently deposited onto the seed layer by Ebeam evaporation at 500 °C. Transmission electron microscopy (TEM) confirmed good homo-epitaxial growth. Without breaking the high vacuum, an n-type amorphous Si (a-Si) layer (0.7 μm thick) was coated onto the absorber layer to form p-n junction. The corresponding I-V characteristics suggest that our low temperature processing technique is applicable for production of poly-Si thin film solar cell on low cost substrates.

Low-temperature synthesis of ZnO nanorods using a seed layer of zinc acetate/sodium dodecyle sulfate nanocomposite

2010 ◽  
Vol 64 (4) ◽  
pp. 513-515 ◽  
Author(s):  
Naoyuki Ueno ◽  
Takanori Maruo ◽  
Norikazu Nishiyama ◽  
Yasuyuki Egashira ◽  
Korekazu Ueyama
Keyword(s):  
Low Temperature ◽  
Zinc Acetate ◽  
Seed Layer ◽  
Zno Nanorods ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis

scholarly journals Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
J. J. Manguele ◽  
F. Baudouin ◽  
C. Cibert ◽  
B. Domengès ◽  
V. Demange ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Seed Layer ◽  
Very Low Temperature

Physical Properties of (Na1–xKx)NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer

2018 ◽  
Vol 10 (30) ◽  
pp. 25536-25546 ◽  
Author(s):  
Sang Hyo Kweon ◽  
Jong-Hyun Kim ◽  
Mir Im ◽  
Woong Hee Lee ◽  
Sahn Nahm
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Physical Properties ◽  
Seed Layer ◽  
Two Dimensional
Sign in / Sign up

Export Citation Format

Share Document