Physical Properties of (Na1–xKx)NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer

2018 ◽  
Vol 10 (30) ◽  
pp. 25536-25546 ◽  
Author(s):  
Sang Hyo Kweon ◽  
Jong-Hyun Kim ◽  
Mir Im ◽  
Woong Hee Lee ◽  
Sahn Nahm
2014 ◽  
Vol 116 (15) ◽  
pp. 153509 ◽  
Author(s):  
C. Besleaga ◽  
A. C. Galca ◽  
C. F. Miclea ◽  
I. Mercioniu ◽  
M. Enculescu ◽  
...  

2019 ◽  
Vol 26 (6) ◽  
pp. 1945-1950
Author(s):  
Marine Verseils ◽  
Alexandre Voute ◽  
Benjamin Langerome ◽  
Maxime Deutsch ◽  
Jean-Blaise Brubach ◽  
...  

A new optical setup is described that allows the reflectivity at grazing incidence to be measured, including ultrathin films and two-dimensional electron systems (2DES) down to liquid-helium temperatures, by exploiting the Berreman effect and the high brilliance of infrared synchrotron radiation. This apparatus is well adapted to detect the absorption of a 2DES of nanometric thickness, namely that which forms spontaneously at the interface between a thin film of LaAlO3 and its SrTiO3 substrate, and to determine its Drude parameters.


2011 ◽  
Vol 1321 ◽  
Author(s):  
K. Wang ◽  
K. H. Wong

ABSTRACTHigh quality polycrystalline silicon (poly-Si) thin film solar cell was successfully fabricated on soda-lime glass substrates by electron beam (Ebeam) evaporation at low processing temperature. The initial poly-Si seed layer (p+-type 0.5 μm thick) was grown via the aluminum induced crystallization (AIC) method at 450 °C. Prominent interdiffusion and Si crystallization have been observed. X-ray diffraction (XRD) shows that (111) is the dominating crystalline orientation. Post annealing at 450 °C for six hours has produced densely packed Si grains with dimension of more than 10 μm in the plane of the film. Non-destructive Raman spectroscopy reveals the remarkable crystalline improvement for samples after thermal treatment. After removing the top diffused Al by chemical means, an absorber layer (p-type) of 0.9 μm thick was subsequently deposited onto the seed layer by Ebeam evaporation at 500 °C. Transmission electron microscopy (TEM) confirmed good homo-epitaxial growth. Without breaking the high vacuum, an n-type amorphous Si (a-Si) layer (0.7 μm thick) was coated onto the absorber layer to form p-n junction. The corresponding I-V characteristics suggest that our low temperature processing technique is applicable for production of poly-Si thin film solar cell on low cost substrates.


2020 ◽  
Vol 2 (3) ◽  
Author(s):  
J. J. Manguele ◽  
F. Baudouin ◽  
C. Cibert ◽  
B. Domengès ◽  
V. Demange ◽  
...  

2018 ◽  
Author(s):  
Rudrashish Panda ◽  
Rudranarayan Samal ◽  
Lizina Khatua ◽  
Susanta Kumar Das

2010 ◽  
Vol 10 (8) ◽  
pp. 3787-3793 ◽  
Author(s):  
Tatsuo Shibata ◽  
Yasuo Ebina ◽  
Tsuyoshi Ohnishi ◽  
Kazunori Takada ◽  
Toshihiro Kogure ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (26) ◽  
pp. 15539-15545
Author(s):  
Tahta Amrillah ◽  
Angga Hermawan ◽  
Shu Yin ◽  
Jenh-Yih Juang

BiFeO3–CoFe2O4 vertically aligned nanocomposites, which mainly discovered in thin-films deposited on rigid substrates, have been successfully transformed into a flexible thin-film using a mica substrate.


Alloy Digest ◽  
1960 ◽  
Vol 9 (4) ◽  

Abstract EVANOHM is a nickel-base alloy having low temperature coefficient of resistance and high electrical resistivity. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on joining. Filing Code: Ni-57. Producer or source: Wilbur B. Driver Company.


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