Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes

2016 ◽  
Vol 119 (16) ◽  
pp. 165702 ◽  
Author(s):  
Hatim Alnoor ◽  
Galia Pozina ◽  
Volodymyr Khranovskyy ◽  
Xianjie Liu ◽  
Donata Iandolo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Seed Layer ◽  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Molar Ratio ◽  
Light Emitting ◽  
Interface Defects

Electro-optical and cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes

2010 ◽  
Vol 207 (1) ◽  
pp. 67-72 ◽  
Author(s):  
S. Kishwar ◽  
K. ul Hasan ◽  
G. Tzamalis ◽  
O. Nur ◽  
M. Willander ◽  
...  
Keyword(s):  
Low Temperature ◽  
White Light ◽  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Light Emitting ◽  
White Light Emitting Diodes

scholarly journals Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49613-49617 ◽  
Author(s):  
Rui Li ◽  
Chunyan Yu ◽  
Hailiang Dong ◽  
Wei Jia ◽  
Tianbao Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrothermal Method ◽  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Light Emitting ◽  
Photoelectric Properties ◽  
Doped Zno ◽  
Zno Nanorod Array

A Ga-doped ZnO nanorod array has been synthesized on a p-GaN/Al2O3 substrate by a hydrothermal method at low temperature.

Study of Au/ZnO nanorods Schottky light-emitting diodes grown by low-temperature aqueous chemical method

2010 ◽  
Vol 100 (2) ◽  
pp. 467-472 ◽  
Author(s):  
N. Bano ◽  
I. Hussain ◽  
O. Nur ◽  
M. Willander ◽  
H. S. Kwack ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Method ◽  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Light Emitting

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

2012 ◽  
Vol 1439 ◽  
pp. 109-114
Author(s):  
XinYi Chen ◽  
Alan M. C. Ng ◽  
Aleksandra B. Djurišić ◽  
Chi Chung Ling ◽  
Wai-Kin Chan ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Type Layer ◽  
Growth Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

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