A self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application

2003 ◽  
Vol 50 (11) ◽  
pp. 2297-2300 ◽  
Author(s):  
Shengdong Zhang ◽  
Xinnan Lin ◽  
Ru Huang ◽  
Ruqi Han ◽  
Mansun Chan
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Double Gate ◽  
Mos Transistor ◽  
Voltage Application

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

2021 ◽  
pp. 2101036
Author(s):  
Jiali Yi ◽  
Xingxia Sun ◽  
Chenguang Zhu ◽  
Shengman Li ◽  
Yong Liu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Full Range ◽  
Logic Circuits ◽  
Double Gate

scholarly journals Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

2010 ◽  
Vol 58 (9) ◽  
pp. 2319-2325 ◽  
Author(s):  
Sheng-Chun Wang ◽  
Pin Su ◽  
Kun-Ming Chen ◽  
Kuo-Hsiang Liao ◽  
Bo-Yuan Chen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Small Signal ◽  
Temperature Dependent ◽  
Noise Characteristics

Real-Time External Compensation of Threshold Voltage Shift Using Double-Gate Oxide TFTs in a Gate Driving System

2016 ◽  
Vol 12 (9) ◽  
pp. 892-897 ◽  
Author(s):  
Bong-Hyun You ◽  
Soo-Yeon Lee ◽  
Seok-Ha Hong ◽  
Jae-Hoon Lee ◽  
Hyun-Chang Kim ◽  
...  
Keyword(s):  
Real Time ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Driving System ◽  
Oxide Tfts ◽  
Gate Driving
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