Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation

2011 ◽  
Vol 51 (6) ◽  
pp. 1105-1112 ◽  
Author(s):  
Swagata Bhattacherjee ◽  
Abhijit Biswas
Keyword(s):  
Performance Analysis ◽  
Carrier Concentration ◽  
Gate Dielectrics ◽  
Double Gate ◽  
High K

Low-voltage high-mobility pentacene thin-film transistors with polymer/high-k oxide double gate dielectrics

2006 ◽  
Vol 88 (24) ◽  
pp. 243513 ◽  
Author(s):  
D. K. Hwang ◽  
Kimoon Lee ◽  
Jae Hoon Kim ◽  
Seongil Im ◽  
Chang Su Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Double Gate ◽  
High K

Nanoscale Transistors: Physics and Materials

2006 ◽  
Vol 958 ◽  
Author(s):  
Mark S. Lundstrom ◽  
Kurtis D. Cantley ◽  
Himadri S. Pal
Keyword(s):  
Gate Dielectric ◽  
Series Resistance ◽  
Gate Dielectrics ◽  
Future Generations ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Metal Gate ◽  
High K ◽  
High K Gate Dielectric

ABSTRACTWe analyze a modern-day 65nm MOSFET technology to determine its electrical characteristics and intrinsic ballistic efficiency. Using that information, we then predict the performance of similar devices comprised of different materials, such as high-k gate dielectrics and III-V channel materials. The effects of series resistance are considered. Comparisons are made between the performance of these hypothetical devices and future generations of devices from the ITRS roadmap, including double-gate MOSFETs. We conclude that a Si channel device with a high-k gate dielectric and metal gate will outperform III-V channel materials for conventional CMOS applications, but will still not suffice in achieving long-term ITRS goals.

MOSFET AND FRONT-END PROCESS INTEGRATION: SCALING TRENDS, CHALLENGES, AND POTENTIAL SOLUTIONS THROUGH THE END OF THE ROADMAP

2002 ◽  
Vol 12 (02) ◽  
pp. 267-293 ◽  
Author(s):  
PETER M. ZEITZOFF ◽  
JAMES A. HUTCHBY ◽  
HOWARD R. HUFF
Keyword(s):  
Process Integration ◽  
Gate Dielectrics ◽  
Double Gate ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Technology Roadmap ◽  
Front End ◽  
High K ◽  
Ic Technology

The development of advanced MOSFETs for future IC technology generations is discussed from the perspective of the 2001 International Technology Roadmap for Semiconductors (ITRS). Starting from overall chip circuit requirements, MOSFET and front-end process integration technology requirements and scaling trends are discussed, as well as some of the key challenges and potential solutions. These include the use of high-k gate dielectrics, metal-gate electrodes, and perhaps the use of non-classical devices such as double-gate MOSFETs in the later stages of the ITRS.

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