Bernal stacking-assisted shear exfoliation of nanoplate bilayers

2018 ◽  
Vol 148 (21) ◽  
pp. 214905
Author(s):  
Inhyuk Jang ◽  
Bong June Sung
Keyword(s):  
Bernal Stacking

scholarly journals Thermal Transport between Graphene Sheets and SiC Substrate by Molecular-Dynamical Calculation

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Zan Wang ◽  
Kedong Bi ◽  
Huawei Guan ◽  
Jiong Wang
Keyword(s):  
Molecular Dynamics ◽  
Wide Temperature Range ◽  
Thermal Transport ◽  
Nonequilibrium Molecular Dynamics ◽  
Graphene Sheets ◽  
Temperature Range ◽  
Dynamical Calculation ◽  
Bernal Stacking

Using nonequilibrium molecular dynamics, we investigate the mechanisms of thermal transport across SiC/graphene sheets. In simulations, 3C-, 4H-, and 6H-SiC are considered separately. Interfacial thermal resistances between Bernal stacking graphene sheets and SiC (Si- or C-terminated) are calculated at the ranges of 100 K~700 K. The results indicate, whether Si-terminated or C-terminated interface, the interfacial thermal resistances of 4H- and 6H-SiC have similar trends over temperatures. Si-terminated interfacial thermal resistances of 3C-SiC are higher than those of 4H- and 6H-SiC in a wide temperature range from 100 K to 600 K. But, for C-rich interface, this range is reduced from 350 K to 500 K.

scholarly journals Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Leif I. Johansson ◽  
Rickard Armiento ◽  
Jose Avila ◽  
Chao Xia ◽  
Stephan Lorcy ◽  
...  
Keyword(s):  
Multilayer Graphene ◽  
Bernal Stacking

scholarly journals Reversible Loss of Bernal Stacking during the Deformation of Few-Layer Graphene in Nanocomposites

ACS Nano ◽  
2013 ◽  
Vol 7 (8) ◽  
pp. 7287-7294 ◽  
Author(s):  
Lei Gong ◽  
Robert J. Young ◽  
Ian A. Kinloch ◽  
Sarah J. Haigh ◽  
Jamie H. Warner ◽  
...  
Keyword(s):  
Layer Graphene ◽  
Bernal Stacking ◽  
Reversible Loss ◽  
Few Layer Graphene

Magnetoabsorption spectra of bilayer graphene ribbons with Bernal stacking

2008 ◽  
Vol 78 (11) ◽  
Author(s):  
Y. C. Huang ◽  
C. P. Chang ◽  
M. F. Lin
Keyword(s):  
Bilayer Graphene ◽  
Bernal Stacking

scholarly journals Erratum: CORRIGENDUM: Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Leif I. Johansson ◽  
Rickard Armiento ◽  
Jose Avila ◽  
Chao Xia ◽  
Stephan Lorcy ◽  
...  
Keyword(s):  
Multilayer Graphene ◽  
Bernal Stacking

scholarly journals Molecular adsorption induces the transformation of rhombohedral- to Bernal-stacking order in trilayer graphene

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
Wenjing Zhang ◽  
Jiaxu Yan ◽  
Chang-Hsiao Chen ◽  
Liu Lei ◽  
Jer-Lai Kuo ◽  
...  
Keyword(s):  
Molecular Adsorption ◽  
Stacking Order ◽  
Bernal Stacking ◽  
Trilayer Graphene

Mapping of Bernal and non-Bernal stacking domains in bilayer graphene using infrared nanoscopy

Nanoscale ◽  
2017 ◽  
Vol 9 (12) ◽  
pp. 4191-4195 ◽  
Author(s):  
Gyouil Jeong ◽  
Boogeon Choi ◽  
Deok-Soo Kim ◽  
Seongjin Ahn ◽  
Baekwon Park ◽  
...  
Keyword(s):  
Bilayer Graphene ◽  
Bernal Stacking

Electronic effects of the Bernal stacking of graphite on self-assembled aromatic adsorbates

2018 ◽  
Vol 54 (69) ◽  
pp. 9607-9610 ◽  
Author(s):  
Nataliya Kalashnyk ◽  
Maud Jaouen ◽  
Céline Fiorini-Debuisschert ◽  
Ludovic Douillard ◽  
André-Jean Attias ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Atomic Layer ◽  
Electronic Effects ◽  
Aromatic Molecules ◽  
Self Assembled ◽  
Bernal Stacking

We show the influence of the material beneath the single atomic layer of graphene on the electronic properties of adsorbed aromatic molecules.

scholarly journals Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Hatef Sadeghi ◽  
Daniel T. H. Lai ◽  
Jean-Michel Redoute ◽  
Aladin Zayegh
Keyword(s):  
Metal Oxide ◽  
Electric Fields ◽  
Bilayer Graphene ◽  
Oxide Semiconductor ◽  
Analytical Models ◽  
Quantum Capacitance ◽  
Graphene Field Effect Transistor ◽  
Similar Temperature ◽  
Bernal Stacking ◽  
Trilayer Graphene

Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.

Sign in / Sign up

Export Citation Format

Share Document