scholarly journals Molecular adsorption induces the transformation of rhombohedral- to Bernal-stacking order in trilayer graphene

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
Wenjing Zhang ◽  
Jiaxu Yan ◽  
Chang-Hsiao Chen ◽  
Liu Lei ◽  
Jer-Lai Kuo ◽  
...  
Keyword(s):  
Molecular Adsorption ◽  
Stacking Order ◽  
Bernal Stacking ◽  
Trilayer Graphene

scholarly journals Stacking-order dependent transport properties of trilayer graphene

2011 ◽  
Vol 84 (16) ◽  
Author(s):  
S. H. Jhang ◽  
M. F. Craciun ◽  
S. Schmidmeier ◽  
S. Tokumitsu ◽  
S. Russo ◽  
...  
Keyword(s):  
Transport Properties ◽  
Stacking Order ◽  
Dependent Transport ◽  
Trilayer Graphene

scholarly journals Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Hatef Sadeghi ◽  
Daniel T. H. Lai ◽  
Jean-Michel Redoute ◽  
Aladin Zayegh
Keyword(s):  
Metal Oxide ◽  
Electric Fields ◽  
Bilayer Graphene ◽  
Oxide Semiconductor ◽  
Analytical Models ◽  
Quantum Capacitance ◽  
Graphene Field Effect Transistor ◽  
Similar Temperature ◽  
Bernal Stacking ◽  
Trilayer Graphene

Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.

scholarly journals Electric-field-induced rich magneto-absorption spectra of ABC-stacked trilayer graphene

RSC Advances ◽  
2015 ◽  
Vol 5 (98) ◽  
pp. 80410-80414 ◽  
Author(s):  
Yi-Ping Lin ◽  
Chiun-Yan Lin ◽  
Cheng-Pong Chang ◽  
Min-Fa Lin
Keyword(s):  
Electric Field ◽  
Absorption Spectra ◽  
Optical Spectra ◽  
Layer Graphene ◽  
Stacking Order ◽  
Trilayer Graphene ◽  
Few Layer Graphene

The magneto-optical spectra of ABC-stacked trilayer graphene are enriched by an electric field, providing a way to experimentally identify the stacking order of few layer graphene systems.

Comparison of TEM and STM observations of small silver clusters on different carbon supports

1990 ◽  
Vol 48 (4) ◽  
pp. 264-265
Author(s):  
Bernd Tesche ◽  
Tobias Schilling
Keyword(s):  
Vibration Isolation ◽  
Pyrolytic Graphite ◽  
Carbon Film ◽  
Silver Clusters ◽  
Carbon Supports ◽  
Stacking Order ◽  
System P ◽  
High Resolution Tem ◽  
High Degree ◽  
Degree Of Order

The objective of our work is to determine:a) whether both of the imaging methods (TEM, STM) yield comparable data andb) which method is better suited for a reliable structure analysis of microclusters smaller than 1.5 nm, where a deviation of the bulk structure is expected.The silver was evaporated in a bell-jar system (p 10−5 pa) and deposited onto a 6 nm thick amorphous carbon film and a freshly cleaved highly oriented pyrolytic graphite (HOPG).The average deposited Ag thickness is 0.1 nm, controlled by a quartz crystal microbalance at a deposition rate of 0.02 nm/sec. The high resolution TEM investigations (100 kV) were executed by a hollow-cone illumination (HCI). For the STM investigations a commercial STM was used. With special vibration isolation we achieved a resolution of 0.06 nm (inserted diffraction image in Fig. 1c). The carbon film shows the remarkable reduction in noise by using HCI (Fig. 1a). The HOPG substrate (Fig. 1b), cleaved in sheets thinner than 30 nm for the TEM investigations, shows the typical arrangement of a nearly perfect stacking order and varying degrees of rotational disorder (i.e. artificial single crystals). The STM image (Fig. 1c) demonstrates the high degree of order in HOPG with atomic resolution.

Determination of the stacking order of curved few-layered graphene systems

Nanoscale ◽  
2012 ◽  
Vol 4 (20) ◽  
pp. 6419 ◽  
Author(s):  
Takuya Hayashi ◽  
Hiroyuki Muramatsu ◽  
Daisuke Shimamoto ◽  
Kazunori Fujisawa ◽  
Tomohiro Tojo ◽  
...  
Keyword(s):  
Stacking Order

Raman spectroscopic study of artificially twisted and non-twisted trilayer graphene

2021 ◽  
Vol 118 (13) ◽  
pp. 133101
Author(s):  
Sanghyun Kim ◽  
Donghyeon Lee ◽  
Binbin Wang ◽  
Shang-Jie Yu ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Raman Spectroscopic ◽  
Raman Spectroscopic Study ◽  
Trilayer Graphene
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