scholarly journals Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

2018 ◽  
Vol 123 (19) ◽  
pp. 193104 ◽  
Author(s):  
Bei Shi ◽  
Qiang Li ◽  
Kei May Lau
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
High Quality ◽  
Si Substrates ◽  
Inp Quantum Dots

Highly luminescent InP-In(Zn)P/ZnSe/ZnS core/shell/shell colloidal quantum dots with tunable emission synthesized based on growth-doping

2021 ◽  
Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Infrared Region ◽  
Colloidal Quantum Dots ◽  
High Quality ◽  
Promising Alternative ◽  
Lower Toxicity ◽  
Near Infrared Region ◽  
Inp Quantum Dots ◽  
Tunable Emission

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...

6-Mercaptohexanoic acid assisted synthesis of high quality InP quantum dots for optoelectronic applications

2013 ◽  
Vol 56 ◽  
pp. 86-91 ◽  
Author(s):  
Waleed E. Mahmoud ◽  
Y.C. Chang ◽  
A.A. Al-Ghamdi ◽  
F. Al-Marzouki ◽  
Lyudmila M. Bronstein
Keyword(s):  
Quantum Dots ◽  
High Quality ◽  
Optoelectronic Applications ◽  
Inp Quantum Dots

Recent progress of III–V quantum dot infrared photodetectors on silicon

2019 ◽  
Vol 7 (46) ◽  
pp. 14441-14453 ◽  
Author(s):  
Aobo Ren ◽  
Liming Yuan ◽  
Hao Xu ◽  
Jiang Wu ◽  
Zhiming Wang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Infrared Photodetectors ◽  
Heterogeneous Integration ◽  
Si Substrates ◽  
Quantum Dot Infrared Photodetectors ◽  
Infrared Photodetection

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

scholarly journals Epitaxial Growth of Few-Layer Black Phosphorene Quantum Dots on Si Substrates

2018 ◽  
Vol 5 (21) ◽  
pp. 1801048 ◽  
Author(s):  
Hao Xu ◽  
Xiaoyu Han ◽  
Zhuangnan Li ◽  
Wei Liu ◽  
Xiao Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Si Substrates ◽  
Black Phosphorene

Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells

1985 ◽  
Vol 58 (2) ◽  
pp. 793-796 ◽  
Author(s):  
Naoki Mino ◽  
Masakazu Kobayashi ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates

Growth of high-quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

2013 ◽  
Vol 10 (11) ◽  
pp. 1496-1499 ◽  
Author(s):  
Jinkwan Kwoen ◽  
Katsuyuki Watanabe ◽  
Yasutomo Ota ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dots ◽  
High Quality ◽  
Inas Quantum Dots ◽  
Si Substrates ◽  
Gaas Nanowire

The Role of Barium In the Heteroepitaxial Growth of Insulator and Semiconductors On Silicon

1993 ◽  
Vol 334 ◽  
Author(s):  
T. K. Chu ◽  
F. Santiago ◽  
M. Stumborg ◽  
C. A. Huber
Keyword(s):  
Epitaxial Growth ◽  
Chemical Reactions ◽  
Surface Chemical ◽  
Metallic Elements ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
In Situ Xps ◽  
Surface Chemical Reactions

AbstractThe epitaxial growth of an insulator, BaF2, and semiconductors of the II-VI and the IV-VI families on Si substrates were carried out. In-situ XPS analyses during the growth of the first monolayers were used to study the surface chemical reactions involved. The results point to a common ingredient in these growths: that the Ba atoms are involved in forming interfacial compounds that would facilitate the heteroepitaxies. In the case of BaF2/Si, a BaSi2 compound has been identified previously. In the case of PbTe and CdTe, the heteroepitaxies on Si are made possible with the BaSi2 buffer. As a result, the impinging semiconductor molecules are broken up, and the metallic elements are ejected from the BaSi2 surface. A new surface chemical, BaTe, is thereby formed. These surface Ba compounds appear to be the dominant factors as the crystal orientations of the BaF2, CdTe, and PbTe layers are independent of those of the Si substrates.

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