scholarly journals Epitaxial Growth of Few-Layer Black Phosphorene Quantum Dots on Si Substrates

2018 ◽  
Vol 5 (21) ◽  
pp. 1801048 ◽  
Author(s):  
Hao Xu ◽  
Xiaoyu Han ◽  
Zhuangnan Li ◽  
Wei Liu ◽  
Xiao Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Si Substrates ◽  
Black Phosphorene

Recent progress of III–V quantum dot infrared photodetectors on silicon

2019 ◽  
Vol 7 (46) ◽  
pp. 14441-14453 ◽  
Author(s):  
Aobo Ren ◽  
Liming Yuan ◽  
Hao Xu ◽  
Jiang Wu ◽  
Zhiming Wang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Infrared Photodetectors ◽  
Heterogeneous Integration ◽  
Si Substrates ◽  
Quantum Dot Infrared Photodetectors ◽  
Infrared Photodetection

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas

2008 ◽  
Vol 600-603 ◽  
pp. 247-250 ◽  
Author(s):  
Yasuo Hirabayashi ◽  
Satoru Kaneko ◽  
Kensuke Akiyama
Keyword(s):  
Epitaxial Growth ◽  
Heating Rate ◽  
Smooth Surface ◽  
Early Stage ◽  
Low Pressure ◽  
Single Domain ◽  
Single Crystalline ◽  
Si Substrates

The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

scholarly journals Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

2011 ◽  
Vol 22 (29) ◽  
pp. 295304 ◽  
Author(s):  
A Pérez del Pino ◽  
E György ◽  
I C Marcus ◽  
J Roqueta ◽  
M I Alonso
Keyword(s):  
Quantum Dots ◽  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
Si Substrates ◽  
Ge Quantum Dots ◽  
Self Assembled

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

Epitaxial growth of black phosphorene enabled on black-phosphorene-like group IV-VI substrates

2021 ◽  
Vol 104 (23) ◽  
Author(s):  
M. U. Muzaffar ◽  
Xue-Sen Wang ◽  
Shunhong Zhang ◽  
Ping Cui ◽  
Zhenyu Zhang
Keyword(s):  
Epitaxial Growth ◽  
Group Iv ◽  
Black Phosphorene
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