scholarly journals High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator

AIP Advances ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 095001 ◽  
Author(s):  
Chaiyanan Kulchaisit ◽  
Juan Paolo Soria Bermundo ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
Yukiharu Uraoka
Keyword(s):  
Hybrid Material ◽  
High Performance ◽  
Gate Insulator ◽  
Siloxane Hybrid Material ◽  
Igzo Tft

scholarly journals High-Performance and Simply-Synthesized Ladder-Like Structured Methacrylate Siloxane Hybrid Material for Flexible Hard Coating

Polymers ◽  
2018 ◽  
Vol 10 (4) ◽  
pp. 449 ◽  
Author(s):  
Yun Kim ◽  
Gwang-Mun Choi ◽  
Jin Bae ◽  
Yong Kim ◽  
Byeong-Soo Bae
Keyword(s):  
Hybrid Material ◽  
High Performance ◽  
Hard Coating ◽  
Siloxane Hybrid Material

scholarly journals Enhancing room-temperature NO2 gas sensing performance based on a metal phthalocyanine/graphene quantum dot hybrid material

RSC Advances ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 5618-5628
Author(s):  
Wenkai Jiang ◽  
Xinwei Chen ◽  
Tao Wang ◽  
Bolong Li ◽  
Min Zeng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Gas Sensor ◽  
Hybrid Material ◽  
High Performance ◽  
Room Temperature ◽  
Gas Sensing ◽  
Metal Phthalocyanine ◽  
Graphene Quantum Dot ◽  
Sensing Performance

A high performance gas sensor based on a metal phthalocyanine/graphene quantum dot hybrid material was fabricated for NO2 detection at room-temperature.

Microsphere‐Like SiO 2 /MXene Hybrid Material Enabling High Performance Anode for Lithium Ion Batteries

Small ◽  
2019 ◽  
Vol 16 (3) ◽  
pp. 1905430 ◽  
Author(s):  
Ge Mu ◽  
Daobin Mu ◽  
Borong Wu ◽  
Chengwei Ma ◽  
Jiaying Bi ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Hybrid Material ◽  
High Performance ◽  
Lithium Ion

Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (86) ◽  
pp. 45742-45748 ◽  
Author(s):  
Byeong-Geun Son ◽  
So Yeon Je ◽  
Hyo Jin Kim ◽  
Jae Kyeong Jeong
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Zirconium Oxide ◽  
High Performance ◽  
Gate Insulator ◽  
Indium Zinc Oxide

Ternary Hybrid Material for High-Performance Lithium–Sulfur Battery

2015 ◽  
Vol 137 (40) ◽  
pp. 12946-12953 ◽  
Author(s):  
Qi Fan ◽  
Wen Liu ◽  
Zhe Weng ◽  
Yueming Sun ◽  
Hailiang Wang
Keyword(s):  
Hybrid Material ◽  
High Performance ◽  
Lithium Sulfur Battery ◽  
Sulfur Battery ◽  
Lithium Sulfur

scholarly journals High-Performance Wireless Ammonia Gas Sensors Based on Reduced Graphene Oxide and Nano-Silver Ink Hybrid Material Loaded on a Patch Antenna

Sensors ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 2070 ◽  
Author(s):  
Bian Wu ◽  
Xingfei Zhang ◽  
Beiju Huang ◽  
Yutong Zhao ◽  
Chuantong Cheng ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Gas Sensors ◽  
Hybrid Material ◽  
Patch Antenna ◽  
High Performance ◽  
Ammonia Gas ◽  
Silver Ink ◽  
Reduced Graphene ◽  
Ammonia Gas Sensors

Effect of Annealing and Gate Insulator Material Changing on the Performances of IGZO-TFT

2014 ◽  
Vol 670-671 ◽  
pp. 1467-1470
Author(s):  
Ji Feng Shi ◽  
Long Long Chen ◽  
Xiang Sun
Keyword(s):  
High Temperature ◽  
Active Layer ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Suitable Temperature ◽  
Igzo Tft

Indium-gallium-zinc oxide Thin Film Transistors (IGZO-TFT) were separately prepared with SiOx and SiNx/ SiOx as gate insulator,with IGZO films deposited at room-temperature by RF magnetron sputtering method as active layer.Compared with TFT with SiOx as gate insulator, The saturation mobility and the on/off ratio of TFT with SiNx/ SiOx as gate insulator were much higher. And,the threshold swing was also smaller.But,the threshold voltage was not good enough,was larger. By annealing at 200°C in the air,the saturation mobility increased from 1.42 to 7.5 cm2.V-1.S-1. While, the saturation mobility had no obvious change when TFT was annealed at high temperature. Seriously, IGZO annealed at high temperature would become crystal,it was not good for the ohmic contact between active layer and metal conductive layer,and,the interface between active layer and insulator would be deteriorated.These will result in the threshold swing become larger and the on/off ratio get smaller.200°C is a suitable temperature for annealing. So,using SiNx/ SiOx films as gate insulator,together with TFT annealing at low temperature, could improve the performances of TFT effectively.

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

2018 ◽  
Vol 10 (9) ◽  
pp. 8102-8109 ◽  
Author(s):  
Jingjing Yu ◽  
Kashif Javaid ◽  
Lingyan Liang ◽  
Weihua Wu ◽  
Yu Liang ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Visible Blind ◽  
Igzo Tft
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