Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

2018 ◽  
Vol 123 (21) ◽  
pp. 215301 ◽  
Author(s):  
E. Hourdakis ◽  
M. Koutsoureli ◽  
G. Papaioannou ◽  
A. G. Nassiopoulou
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Anodic Alumina ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Barrier Type

Field Dependent Carrier Transport Mechanisms in Metal-Insulator–Metal Devices with Ba0.8Sr0.2TiO3/ ZrO2 Heterostructured Thin Films as the Dielectric

2013 ◽  
Vol 1547 ◽  
pp. 53-60
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Colin A. Wolden ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Leakage Current ◽  
Electron Trap ◽  
Field Region ◽  
Ohmic Conduction ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTBa0.8Sr0.2TiO3/ZrO2 heterostructured thin films with different individual layer ZrO2 thicknesses are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of the above multilayered thin films in metal-insulator-metal (MIM) device structures are taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different conduction mechanisms responsible for the leakage current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with deep electron trap energy levels (φt) whereas space charge limited current (SCLC) mechanism is contributing to the leakage current in the medium field region with shallow electron trap levels (Et). Also, it is seen that Ohmic conduction process is the dominant mechanism in the low field region having activation energy (Ea) for the electrons. The estimated trap level energy varies from 0.2 to 1.31 eV for deep level traps and from 0.08 to 0.18 eV for shallow level traps whereas the activation energy for electrons in ohmic conduction process varies from 0.05 to 0.17 eV with the increase of ZrO2 sub layer thickness. An energy band diagram is given to explain the dominance of the various leakage mechanisms in different field regions for these heterostructured thin films.

Carrier Transport Mechanisms in Metal-Insulator–Metal Au/Ba0.8Sr0.2TiO3/ ZrO2/ Ba0.8Sr0.2TiO3/Pt Thin Film Heterostructures

2013 ◽  
Vol 1507 ◽  
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Colin A. Wolden ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Sol Gel ◽  
Level Energy ◽  
Trap Level ◽  
Ohmic Conduction ◽  
Metal Insulator ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTBa0.8Sr0.2TiO3/ZrO2 heterostructured thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of metal-insulator-metal (MIM) devices using the above multilayered thin film as the dielectric have been taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different leakage mechanisms contributing to the conduction current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with a deep trap level energy (φt) of 1.31 eV whereas space charge limited current (SCLC) mechanism and Ohmic conduction process are contributing to the leakage current in the medium and low field regions respectively. The estimated shallow trap level (Et) for SCLC mechanism is 0.26 eV whereas the activation energy (Ea) for the electrons in the Ohmic conduction process is about 0.07 eV. An energy band diagram is given to explain the various leakage mechanisms in different field regions for these heterostructured thin films.

Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

2011 ◽  
Vol 519 (11) ◽  
pp. 3831-3834 ◽  
Author(s):  
M. Lukosius ◽  
C. Baristiran Kaynak ◽  
Ch. Wenger ◽  
G. Ruhl ◽  
S. Rushworth ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Vapor ◽  
Metal Insulator ◽  
Metal Insulator Metal

Enhancement on crystallinity property of low annealed PbTiO3 thin films for metal-insulator-metal capacitor

2018 ◽  
Author(s):  
Z. Nurbaya ◽  
M. H. Wahid ◽  
M. D. Rozana ◽  
S. A. H. Alrokayan ◽  
H. A. Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Insulator ◽  
Metal Insulator Metal

Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al2O3/HfO2/Al2O3versus SiO2/HfO2/SiO2

2011 ◽  
Vol 50 (10S) ◽  
pp. 10PB06 ◽  
Author(s):  
Sang-Uk Park ◽  
Hyuk-Min Kwon ◽  
In-Shik Han ◽  
Yi-Jung Jung ◽  
Ho-Young Kwak ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Insulator ◽  
Dielectric Thin Films ◽  
Metal Insulator Metal ◽  
Multilayer Dielectric

Nanostructured Barrier Type Anodic Oxide Metal-Insulator-Metal Capacitors

2012 ◽  
Vol 7 (4) ◽  
pp. 400-404 ◽  
Author(s):  
D. Kannadassan ◽  
R. Karthik ◽  
Maryam Shojaei Bhagini ◽  
P. S. Mallick
Keyword(s):  
Anodic Oxide ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Barrier Type
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