Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by ultrahigh-temperature rapid thermal oxidation

2018 ◽  
Vol 123 (16) ◽  
pp. 161591 ◽  
Author(s):  
Susumu Maeda ◽  
Haruo Sudo ◽  
Hideyuki Okamura ◽  
Kozo Nakamura ◽  
Koji Sueoka ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Silicon Wafers ◽  
Rapid Thermal Oxidation ◽  
Ultrahigh Temperature ◽  
Oxygen Precipitates

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

2016 ◽  
Vol 109 (18) ◽  
pp. 182114 ◽  
Author(s):  
Takuji Hosoi ◽  
Daisuke Nagai ◽  
Mitsuru Sometani ◽  
Yoshihito Katsu ◽  
Hironori Takeda ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Oxidation Temperature ◽  
Interface Properties ◽  
Rapid Thermal Oxidation ◽  
Ultrahigh Temperature

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

A Novel Process Simulator for Rapid Thermal Oxidation: RAPIDOX

1990 ◽  
Vol 36 (3-4) ◽  
pp. 183-188
Author(s):  
S S Purkar ◽  
S Singh ◽  
A D Shaligram
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Process Simulator

Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

2016 ◽  
Vol 99 ◽  
pp. 231-235 ◽  
Author(s):  
D. Kot ◽  
G. Kissinger ◽  
M.A. Schubert ◽  
M. Klingsporn ◽  
A. Huber ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitates
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