scholarly journals 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

2018 ◽  
Vol 112 (8) ◽  
pp. 081101 ◽  
Author(s):  
Dong Liu ◽  
Sang June Cho ◽  
Jeongpil Park ◽  
Jung-Hun Seo ◽  
Rafael Dalmau ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Hole Injection ◽  
Type Silicon ◽  
P Type ◽  
Uv Leds

Passivated p-type silicon: Hole injection tunable anode material for organic light emission

2008 ◽  
Vol 92 (7) ◽  
pp. 073303 ◽  
Author(s):  
W. Q. Zhao ◽  
G. Z. Ran ◽  
W. J. Xu ◽  
G. G. Qin
Keyword(s):  
Anode Material ◽  
Light Emission ◽  
Hole Injection ◽  
Type Silicon ◽  
Organic Light ◽  
P Type

226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

2018 ◽  
Vol 113 (1) ◽  
pp. 011111 ◽  
Author(s):  
Dong Liu ◽  
Sang June Cho ◽  
Jeongpil Park ◽  
Jiarui Gong ◽  
Jung-Hun Seo ◽  
...  
Keyword(s):  
Hole Injection ◽  
P Type ◽  
Uv Leds ◽  
Uv Reflection

Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon

2010 ◽  
Vol 44 (8) ◽  
pp. 1030-1033
Author(s):  
A. M. Ivanov ◽  
I. M. Kotina ◽  
M. S. Lasakov ◽  
N. B. Strokan ◽  
L. M. Tuhkonen
Keyword(s):  
Aluminum Nitride ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Type Silicon ◽  
P Type

scholarly journals Влияние температуры отжига на электрически активные центры в кремнии, имплантированном ионами германия

2019 ◽  
Vol 53 (2) ◽  
pp. 161
Author(s):  
Н.А. Соболев ◽  
О.В. Александров ◽  
В.И. Сахаров ◽  
И.Т. Серенков ◽  
Е.И. Шек ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Annealing Temperature ◽  
Single Crystal Silicon ◽  
High Temperature Annealing ◽  
Crystal Silicon ◽  
Type Silicon ◽  
Special Distribution ◽  
P Type

AbstractThe implantation of Czochralski-grown p -type silicon with 1-MeV germanium ions at a dose of 2 . 5 × 10^14 cm^–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

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