Passivated p-type silicon: Hole injection tunable anode material for organic light emission

2008 ◽  
Vol 92 (7) ◽  
pp. 073303 ◽  
Author(s):  
W. Q. Zhao ◽  
G. Z. Ran ◽  
W. J. Xu ◽  
G. G. Qin
Keyword(s):  
Anode Material ◽  
Light Emission ◽  
Hole Injection ◽  
Type Silicon ◽  
Organic Light ◽  
P Type

Improving charge-injection balance and cathode transmittance of top-emitting organic light-emitting device with p-type silicon anode

2005 ◽  
Vol 87 (8) ◽  
pp. 081106 ◽  
Author(s):  
G. L. Ma ◽  
G. Z. Ran ◽  
A. G. Xu ◽  
Y. H. Xu ◽  
Y. P. Qiao ◽  
...  
Keyword(s):  
Charge Injection ◽  
Silicon Anode ◽  
Light Emitting ◽  
Type Silicon ◽  
Organic Light ◽  
P Type

scholarly journals Hole Injection Role of p-Type Conjugated Polymer Nanolayers in Phosphorescent Organic Light-Emitting Devices

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2283
Author(s):  
Sooyong Lee ◽  
Hwajeong Kim ◽  
Youngkyoo Kim
Keyword(s):  
Thermal Annealing ◽  
Annealing Time ◽  
Conjugated Polymer ◽  
Hole Injection ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices ◽  
P Type

Here, we report the hole injection role of p-type conjugated polymer layer in phosphorescent organic light-emitting devices (OLEDs). Poly(3-hexylthiophene) (P3HT) nanolayers (thickness = ~1 nm thick), which were subjected to thermal annealing at 140 °C by varying annealing time, were inserted between indium tin oxide (ITO) anodes and hole transport layers (N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine, NPB). The 1 nm-thick P3HT layers showed very weak absorption in the visible light range of 500~650 nm. The device results disclosed that the presence of P3HT layers were just able to improve the charge injection of OLEDs leading to an enhanced luminance irrespective of thermal annealing condition. The highest luminance and efficiency were achieved for the OLEDs with the P3HT layers annealed at 140 °C for 10 min. Further annealing for 30 min resulted in turn-down of device performances. The emission color was almost unchanged by the presence of P3HT layers even though the color coordinates were marginally fluctuated according to the annealing time. The present result delivers the possibility to use p-type conjugated polymers (i.e., P3HT) as a hole injection layer in OLEDs.

scholarly journals 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

2018 ◽  
Vol 112 (8) ◽  
pp. 081101 ◽  
Author(s):  
Dong Liu ◽  
Sang June Cho ◽  
Jeongpil Park ◽  
Jung-Hun Seo ◽  
Rafael Dalmau ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Hole Injection ◽  
Type Silicon ◽  
P Type ◽  
Uv Leds

Enhancement of efficiency of white organic light-emitting diodes with p-type hole injection layer

2009 ◽  
Vol 517 (17) ◽  
pp. 5293-5297 ◽  
Author(s):  
Shui-Hsiang Su ◽  
Cheng-Chieh Hou ◽  
Jin-Shian Tsai ◽  
Meiso Yokoyama
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Organic Light ◽  
P Type

Comparative studies on the inorganic and organic p-type dopants in organic light-emitting diodes with enhanced hole injection

2013 ◽  
Vol 102 (15) ◽  
pp. 153301 ◽  
Author(s):  
Chun-Hong Gao ◽  
Xiao-Zhao Zhu ◽  
Lei Zhang ◽  
Dong-Ying Zhou ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Comparative Studies ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Organic P ◽  
Light Emitting ◽  
Organic Light ◽  
P Type ◽  
Inorganic And Organic

Experimental study of the organic light emitting diode with a p-type silicon anode

2006 ◽  
Vol 496 (2) ◽  
pp. 665-668 ◽  
Author(s):  
G.L. Ma ◽  
A.G. Xu ◽  
G.Z. Ran ◽  
Y.P. Qiao ◽  
B.R. Zhang ◽  
...  
Keyword(s):  
Experimental Study ◽  
Light Emitting Diode ◽  
Silicon Anode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Type Silicon ◽  
Organic Light ◽  
P Type
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