Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

2011 ◽  
Vol 98 (1) ◽  
pp. 011108 ◽  
Author(s):  
Dabing Li ◽  
Xiaojuan Sun ◽  
Hang Song ◽  
Zhiming Li ◽  
Yiren Chen ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

2018 ◽  
Vol 123 (16) ◽  
pp. 161551 ◽  
Author(s):  
S. Walde ◽  
M. Brendel ◽  
U. Zeimer ◽  
F. Brunner ◽  
S. Hagedorn ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Metal Semiconductor Metal ◽  
Open Core

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

2014 ◽  
Author(s):  
Heather C. Chiamori ◽  
Chetan Angadi ◽  
Ateeq Suria ◽  
Ashwin Shankar ◽  
Minmin Hou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Metal Semiconductor Metal ◽  
Effects Of Radiation ◽  
Ultraviolet Photodetectors

Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)

2000 ◽  
Vol 77 (3) ◽  
pp. 444-446 ◽  
Author(s):  
Z. M. Zhao ◽  
R. L. Jiang ◽  
P. Chen ◽  
D. J. Xi ◽  
Z. Y. Luo ◽  
...  
Keyword(s):  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors
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