scholarly journals Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

2018 ◽  
Vol 112 (2) ◽  
pp. 021103 ◽  
Author(s):  
X. Collins ◽  
A. P. Craig ◽  
T. Roblin ◽  
A. R. J. Marshall
Keyword(s):  
Avalanche Photodiodes ◽  
Impact Ionisation

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes

2010 ◽  
Vol 645-648 ◽  
pp. 1081-1084
Author(s):  
James E. Green ◽  
W.S. Loh ◽  
J.P.R. David ◽  
R.C. Tozer ◽  
Stanislav I. Soloviev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Avalanche Photodiodes ◽  
Depletion Region ◽  
Low Noise ◽  
Excess Noise ◽  
Local Model ◽  
Prior Work ◽  
Absorption Layer ◽  
Impact Ionisation ◽  
Dark Currents

We report photomultiplication, M, and excess noise, F, measurements at 244nm and 325nm in two 4H-SiC separate absorption and multiplication region avalanche photodiodes (SAM-APDs). Sample A is a 4 x 4 array of 16 SAM-APDs. This structure possesses a relatively thin absorption layer resulting in more mixed injection, and consequently higher noise than sample B. The absorption layer of sample B does not deplete, so 244nm light results in >99% absorption outside the depletion region resulting in very low excess noise. Both structures exhibit very low dark currents and abrupt uniform breakdown at 194V and 624V for samples A and B respectively. Excess noise is treated using a local model [1]. The effective ratio of impact ionisation coefficients (keff) is approximately 0.007, this indicates a significant reduction in the electron impact ionisation coefficient, α, compared to prior work [2-5]. We conclude that the value of α will require modification if thick silicon carbide structures are to fit the local model for multiplication and excess noise.

Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes

2008 ◽  
Vol 600-603 ◽  
pp. 1207-1210
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
Stanislav I. Soloviev ◽  
H.Y. Cha ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Electric Fields ◽  
Room Temperature ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Extreme Environment ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Avalanche Multiplication ◽  
Impact Ionisation ◽  
Ionization Coefficients

The hole dominated avalanche multiplication characteristics of 4H-SiC Separate Absorption and Multiplication avalanche photodiodes (SAM-APDs) were determined experimentally and modeled using a local multiplication model. The 0.5x 0.5mm2 diodes had very low dark current and exhibited sharp, uniform breakdown at about 580V. The data agree with modeling result using extrapolated impact ionization coefficients reported by Ng et al. and is probably valid for electric fields as low as ~0.9MV/cm at room temperature provided that both the C-V measurements and electric field determination in this work are correct. The packaged devices demonstrate a positive temperature coefficient of breakdown voltage for temperatures ranging from 100K to 300K which is a desired feature for extreme environment applications.

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si

Positron Impact Ionisation of Xe

2018 ◽  
Vol 8 (4) ◽  
pp. 21-24
Author(s):  
Sujeet Kumar ◽  
Brij Mohan Prasad Singh ◽  
S. K. Shrivastava
Keyword(s):  
Positron Impact ◽  
Impact Ionisation

Electron Impact Ionisation of Be+

2018 ◽  
Vol 8 (4) ◽  
pp. 17-20
Author(s):  
Brij Mohan Prasad Singh ◽  
Sujeet Kumar ◽  
S. K. Shrivastava
Keyword(s):  
Electron Impact ◽  
Impact Ionisation

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

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