Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Fengzai Tang; Kean B. Lee; Ivor Guiney; Martin Frentrup; Jonathan S. Barnard; Giorgio Divitini; Zaffar H. Zaidi; Tomas L. Martin; Paul A. Bagot; Michael P. Moody; Colin J. Humphreys; Peter A. Houston; Rachel A. Oliver; David J. Wallis

doi:10.1063/1.5006255

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Journal of Applied Physics ◽

10.1063/1.5006255 ◽

2018 ◽

Vol 123 (2) ◽

pp. 024902 ◽

Cited By ~ 1

Author(s):

Fengzai Tang ◽

Kean B. Lee ◽

Ivor Guiney ◽

Martin Frentrup ◽

Jonathan S. Barnard ◽

...

Keyword(s):

Chemical Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Modelling the threshold voltage of p‐channel enhancement‐mode GaN heterostructure field‐effect transistors

IET Power Electronics ◽

10.1049/iet-pel.2017.0438 ◽

2018 ◽

Vol 11 (4) ◽

pp. 675-680 ◽

Cited By ~ 3

Author(s):

Ashwani Kumar ◽

Maria Merlyne De Souza

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

Applied Physics Express ◽

10.1143/apex.4.114101 ◽

2011 ◽

Vol 4 (11) ◽

pp. 114101 ◽

Cited By ~ 21

Author(s):

Daniel Morgan ◽

Mahbuba Sultana ◽

Husna Fatima ◽

Sho Sugiyama ◽

Qhalid Fareed ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Applied Physics Express ◽

10.1143/apex.4.114102 ◽

2011 ◽

Vol 4 (11) ◽

pp. 114102 ◽

Cited By ~ 53

Author(s):

Herwig Hahn ◽

Gerrit Lükens ◽

Nico Ketteniss ◽

Holger Kalisch ◽

Andrei Vescan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Recessed Gate

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Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation

Applied Physics Letters ◽

10.1063/1.3446891 ◽

2010 ◽

Vol 96 (24) ◽

pp. 243506 ◽

Cited By ~ 18

Author(s):

Suk Choi ◽

Hee Jin Kim ◽

Zachary Lochner ◽

Yun Zhang ◽

Yi-Che Lee ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Enhancement Mode ◽

Mode Operation ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Applied Physics Express ◽

10.7567/apex.8.036502 ◽

2015 ◽

Vol 8 (3) ◽

pp. 036502 ◽

Cited By ~ 6

Author(s):

Kean B. Lee ◽

Ivor Guiney ◽

Sheng Jiang ◽

Zaffar H. Zaidi ◽

Hongtu Qian ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Blocking Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

Applied Physics Letters ◽

10.1063/1.3553229 ◽

2011 ◽

Vol 98 (7) ◽

pp. 072108 ◽

Cited By ~ 25

Author(s):

Yuhua Wen ◽

Zhiyuan He ◽

Jialin Li ◽

Ruihong Luo ◽

Peng Xiang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Selective Area Growth ◽

Growth Technique ◽

Enhancement Mode ◽

Selective Area ◽

Area Growth ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Cited By ~ 3

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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