Improved performance of Ta2O5−x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage

2017 ◽  
Vol 111 (22) ◽  
pp. 223505 ◽  
Author(s):  
K. X. Shi ◽  
H. Y. Xu ◽  
Z. Q. Wang ◽  
X. N. Zhao ◽  
W. Z. Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Data Retention ◽  
Resistive Switching Memory ◽  
Good Data ◽  
Multilevel Storage ◽  
Power Operation ◽  
Ultralow Power ◽  
Improved Performance ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22070-22074 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Tianjiao Dai ◽  
Lei Li ◽  
Xinnan Lin ◽  
Shengdong Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Multi Level ◽  
Switching Memory

This work investigated the influence of surrounding material on RRAM and offered a strategy to achieve multilevel storage functionality with superior scalability and stability, suggesting its potential to be applied in neuromorphic computing area.

Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density

2016 ◽  
Vol 8 (35) ◽  
pp. 23348-23355 ◽  
Author(s):  
Ahmed Al-Haddad ◽  
Chengliang Wang ◽  
Haoyuan Qi ◽  
Fabian Grote ◽  
Liaoyong Wen ◽  
...  
Keyword(s):  
Power Consumption ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Memory Arrays ◽  
Ultrahigh Density ◽  
Switching Memory

Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory

2020 ◽  
Vol 30 (27) ◽  
pp. 2002653
Author(s):  
So‐Yeon Kim ◽  
June‐Mo Yang ◽  
Eun‐Suk Choi ◽  
Nam‐Gyu Park
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Switching Memory

Analysis of tail bits generation of multilevel storage in resistive switching memory

2018 ◽  
Vol 27 (11) ◽  
pp. 118501
Author(s):  
Jing Liu ◽  
Xiaoxin Xu ◽  
Chuanbing Chen ◽  
Tiancheng Gong ◽  
Zhaoan Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Switching Memory

Improved Performance of CH3NH3PbI3–xClx Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures

2020 ◽  
Vol 12 (13) ◽  
pp. 15439-15445 ◽  
Author(s):  
Fei Xia ◽  
Ying Xu ◽  
Bixin Li ◽  
Wei Hui ◽  
Shiyang Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Improved Performance ◽  
Switching Memory

Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

2010 ◽  
Vol 159 ◽  
pp. 333-337 ◽  
Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
H.Y. Lee ◽  
G. Chen ◽  
F. Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Device ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Good Memory ◽  
Current Conduction ◽  
Memory Characteristics ◽  
Switching Memory

Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

Oxidized carbon quantum dot–graphene oxide nanocomposites for improving data retention of resistive switching memory

2018 ◽  
Vol 6 (8) ◽  
pp. 2026-2033 ◽  
Author(s):  
Meng Qi ◽  
Liang Bai ◽  
Haiyang Xu ◽  
Zhongqiang Wang ◽  
Zhenhui Kang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Quantum Dot ◽  
Resistive Switching ◽  
Data Retention ◽  
Resistive Switching Memory ◽  
Carbon Quantum Dot ◽  
Oxidized Carbon ◽  
Oxygen Group ◽  
Group Migration ◽  
Switching Memory

Data retention was improved in GO-based RRAM through fabricating OCQD–GO nanocomposites, thanks to the increase in the oxygen group migration barrier.

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