Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22070-22074 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Tianjiao Dai ◽  
Lei Li ◽  
Xinnan Lin ◽  
Shengdong Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Multi Level ◽  
Switching Memory

This work investigated the influence of surrounding material on RRAM and offered a strategy to achieve multilevel storage functionality with superior scalability and stability, suggesting its potential to be applied in neuromorphic computing area.

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory

2020 ◽  
Vol 30 (27) ◽  
pp. 2002653
Author(s):  
So‐Yeon Kim ◽  
June‐Mo Yang ◽  
Eun‐Suk Choi ◽  
Nam‐Gyu Park
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Switching Memory

Analysis of tail bits generation of multilevel storage in resistive switching memory

2018 ◽  
Vol 27 (11) ◽  
pp. 118501
Author(s):  
Jing Liu ◽  
Xiaoxin Xu ◽  
Chuanbing Chen ◽  
Tiancheng Gong ◽  
Zhaoan Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Switching Memory

scholarly journals Reliability of analog resistive switching memory for neuromorphic computing

2020 ◽  
Vol 7 (1) ◽  
pp. 011301 ◽  
Author(s):  
Meiran Zhao ◽  
Bin Gao ◽  
Jianshi Tang ◽  
He Qian ◽  
Huaqiang Wu
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Memory
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