Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers

2017 ◽  
Vol 122 (10) ◽  
pp. 105306 ◽  
Author(s):  
Shane Chang ◽  
Lin Lung Wei ◽  
Tien Tung Luong ◽  
Ching Chang ◽  
Li Chang
Keyword(s):  
Buffer Layers ◽  
Threading Dislocation ◽  
Dislocation Reduction ◽  
Algan Buffer

Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers

2011 ◽  
Author(s):  
Richard Gutt ◽  
Thorsten Passow ◽  
Wilfried Pletschen ◽  
Michael Kunzer ◽  
Lutz Kirste ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Algan Buffer

Epitaxial GaN Layer Growth Using Nitrogen Enriched TiN Buffer Layers

2006 ◽  
Vol 916 ◽  
Author(s):  
Kazuhiro Ito ◽  
Yu Uchida ◽  
Sang-jin Lee ◽  
Susumu Tsukimoto ◽  
Yuhei Ikemoto ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Light Emission ◽  
Chemical Vapor ◽  
Nucleation Site ◽  
Layer Growth ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Nitrogen Enrichment ◽  
Threading Dislocation ◽  
Sapphire Substrates

AbstractAbout 20 years ago, the discovery of an AlN buffer layer lead to the breakthrough in epitaxial growth of GaN layers with mirror-like surface, using a metal organic chemical vapor deposition (MOCVD) technique on sapphire substrates. Since then, extensive efforts have been continued to develop a conductive buffer layer/substrate for MOCVD-grown GaN layers to improve light emission of GaN light-emitting diodes. In the present study, we produced MOCVD-grown, continuous, flat epitaxial GaN layers on nitrogen enriched TiN buffer layers with the upper limit of the nitrogen content of TiN deposited at room temperature (RT) on sapphire substrates. It was concluded that the nitrogen enrichment would reduce significantly the TiN/GaN interfacial energy. The RT deposition of the TiN buffer layers suppresses their grain growth during the nitrogen enrichment and the grain size refining must increase nucleation site of GaN. In addition, threading dislocation density in the GaN layers grown on TiN was much lower than that in the GaN layers grown on AlN.

Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-µm-Wavelength Laser on GaAs

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 614-617 ◽  
Author(s):  
Yae Okuno ◽  
Toshihiro Kawano ◽  
Tomonobu Tsuchiya ◽  
Tsuyoshi Taniwatari
Keyword(s):  
Threading Dislocation ◽  
Dislocation Reduction

Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

2007 ◽  
Vol 300 (1) ◽  
pp. 70-74 ◽  
Author(s):  
M.J. Kappers ◽  
R. Datta ◽  
R.A. Oliver ◽  
F.D.G. Rayment ◽  
M.E. Vickers ◽  
...  
Keyword(s):  
Thin Films ◽  
Threading Dislocation ◽  
Dislocation Reduction

Threading Dislocation Behavior in InGaAs/GaAs (001) Superlattice Buffer Layers

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940017
Author(s):  
Md Tanvirul Islam ◽  
Tedi Kujofsa ◽  
Xinkang Chen ◽  
J. E. Ayers
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Type I ◽  
Type Ii ◽  
Type Iii ◽  
Indium Composition ◽  
Type Iv ◽  
Modulation Type ◽  
Dislocation Behavior

We conducted a modeling study of the threading dislocation behavior in chirped and unchirped InGaAs/GaAs (001) strained-layer superlattices (SLSs) using a Dodson & Tsao / Kujofsa & Ayers (DTKA) type plastic flow model. Four types of SLSs were investigated: type I was chirped using compositional modulation, type II was chirped using layer thickness modulation, type III was unchirped with alternating layers of InGaAs and GaAs, and type IV was unchirped with alternating layers of InGaAs having two different compositions. Generally the surface and average values of the dislocation density decreased with increasing total thickness. The dependence on top indium composition was more complex, due to dislocation compensation and multiplication effects, but for type II and IV superlattices, the average and surface threading dislocation densities increased in nearly monotonic fashion with top indium composition. Based on these results, the compositionally-modulated chirped (type I) and InGaAs/GaAs unchirped (type III) superlattices appear to be best suited as buffer layers for metamorphic devices, while the chirped superlattices with layer thickness modulation (type II) and InGaAs/InGaAs unchirped (type IV) superlattices appear to be poorly suited for use as buffer layers for devices containing high indium content.

Residual Strain and Defect Analysis in as Grown and Annealed SiGe Layers

1991 ◽  
Vol 220 ◽  
Author(s):  
A. R. Powell ◽  
R. A. Kubiak ◽  
T. E. Whall ◽  
E. H. C. Parker ◽  
D. K. Bowen
Keyword(s):  
Residual Strain ◽  
Buffer Layers ◽  
Limited Area ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
High Temperature Anneal ◽  
Dislocation Densities ◽  
Acceptable Quality ◽  
Strained Sige

ABSTRACTIn this paper we address the problem of producing SiGe buffer layers of acceptable quality for the growth of symmetrically strained SiGe structures. Initially we consider SiGe layers grown to well beyond the metastable critical thickness and examine the degree of residual strain both as - grown and post anneal. The defect levels in metastable SiGe layers following high temperature anneal were also studied. A buffer layer was grown consisting of stacked metastable SiGe layers each of which is annealed in situ prior to the growth of the next layer and terminating with a 0.45 SiGe alloy. This produces nearly fully relaxed 1.15pim thick structures with threading dislocation densities of 4 × 106cm−2. Limited area growth on Si suggests that elastically relaxed material free of both threading and misfit dislocations can be produced.

Equilibrium Lattice Relaxation and Misfit Dislocations in Continuously- and Step-Graded InxGa1-xAs/GaAs (001) and GaAs1-yPy/GaAs (001) Metamorphic Buffer Layers

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1520009 ◽  
Author(s):  
Tedi Kujofsa ◽  
John E. Ayers
Keyword(s):  
Dislocation Density ◽  
Buffer Layer ◽  
Minimum Energy ◽  
Lattice Relaxation ◽  
Structure Type ◽  
Elastic Stiffness ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Metamorphic Buffer

The inclusion of metamorphic buffer layers (MBL) in the design of lattice-mismatched semiconductor heterostructures is important in enhancing reliability and performance of optical and electronic devices. These metamorphic buffer layers usually employ linear grading of composition, and materials including InxGa1-xAs and GaAs1-yPy have been used. Non-uniform and continuously graded profiles are beneficial for the design of partially-relaxed buffer layers because they reduce the threading dislocation density by allowing the distribution of the misfit dislocations throughout the metamorphic buffer layer, rather than concentrating them at the interface where substrate defects and tangling can pin dislocations or otherwise reduce their mobility as in the case of uniform compositional growth. In this work we considered heterostructures involving a linearly-graded (type A) or step-graded (type B) buffer layer grown on a GaAs (001) substrate. For each structure type we present minimum energy calculations and compare the cases of cation (Group III) and anion (Group V) grading. In addition, we studied the (i) average and surface in-plane strain and (ii) average misfit dislocation density for heterostructures with various thickness and compositional profile. Moreover, we show that differences in the elastic stiffness constants give rise to significantly different behavior in these two commonly-used buffer layer systems.

Threading dislocation reduction in strained layers

1999 ◽  
Vol 85 (1) ◽  
pp. 182-192 ◽  
Author(s):  
A. E. Romanov ◽  
W. Pompe ◽  
S. Mathis ◽  
G. E. Beltz ◽  
J. S. Speck
Keyword(s):  
Threading Dislocation ◽  
Strained Layers ◽  
Dislocation Reduction
Sign in / Sign up

Export Citation Format

Share Document