Threading dislocation reduction in strained layers

1999 ◽  
Vol 85 (1) ◽  
pp. 182-192 ◽  
Author(s):  
A. E. Romanov ◽  
W. Pompe ◽  
S. Mathis ◽  
G. E. Beltz ◽  
J. S. Speck
Keyword(s):  
Threading Dislocation ◽  
Strained Layers ◽  
Dislocation Reduction

Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-µm-Wavelength Laser on GaAs

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 614-617 ◽  
Author(s):  
Yae Okuno ◽  
Toshihiro Kawano ◽  
Tomonobu Tsuchiya ◽  
Tsuyoshi Taniwatari
Keyword(s):  
Threading Dislocation ◽  
Dislocation Reduction

Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

2007 ◽  
Vol 300 (1) ◽  
pp. 70-74 ◽  
Author(s):  
M.J. Kappers ◽  
R. Datta ◽  
R.A. Oliver ◽  
F.D.G. Rayment ◽  
M.E. Vickers ◽  
...  
Keyword(s):  
Thin Films ◽  
Threading Dislocation ◽  
Dislocation Reduction

The Influence of Substrate Patterning on Threading Dislocation Density and Residual Stress in GaAs/Si Heteroepitaxial Layers.

1990 ◽  
Vol 198 ◽  
Author(s):  
Hyunchul Sohn ◽  
Eicke R. Weber ◽  
Jay Tu ◽  
Henry P. Lee ◽  
Shy Wang
Keyword(s):  
Residual Stress ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Etch Pits ◽  
Cross Sectional ◽  
Strained Layers ◽  
Si Substrates ◽  
Growth Area ◽  
Threading Dislocation Density ◽  
Influence Of Substrate

ABSTRACTThe growth of GaAs films by MBE on mesa-type patterned Si substrates has been investigated. Mesa widths were varied from 10 µm to 200 µm and were prepared using chemical etching with Si3N4 masks and reactive ion etching. The residual stress in the epitaxial layer was estimated using low temperature (7K) photoluminescence and the defect distribution was studied by cross sectional TEM, dislocation densities were in addition determined by etch pits. The residual stress and the dislocation density decreased monotonically with the reduction of growth area. By the incorporation of strained layers with the reduction of growth area, the etch pit density in GaAs layers on mesas was reduced further.

The role of mixed cubic/hexagonal nucleation layers on threading dislocation reduction in epitaxial GaN films

1996 ◽  
Vol 54 ◽  
pp. 646-647
Author(s):  
X. H. Wu ◽  
L. M. Brown ◽  
D. Kapolnek ◽  
S. Kellert ◽  
B. Kellert ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Flow Reactor ◽  
Defect Density ◽  
Threading Dislocation ◽  
Growth Substrate ◽  
Dislocation Reduction ◽  
Reactor Operating ◽  
Gan Buffer Layer

The defect density and their configuration in epitaxial GaN films on sapphire are strongly related to the optical and electrical properties of the films. The crystalline quality of GaN on sapphire can be greatly improved by introducing a low temperature GaN buffer layer. However, recent studies in our group demonstrate that the pre-growth substrate treatment can significantly change the defects structure and electron properties of the films. In this paper, we present our results on studies of the film microstructures and their corresponding nucleation layers. We propose a novel mechanism for dislocation reduction for GaN on sapphire.The growths for this study were achieved in a horizontal flow reactor operating at atmospheric pressure. Basal plane AI2O3 (Union Carbide) substrates were first cleaned in solvents and then heated in flowing H2 at 1050°C. Sample A was exposed to an ammonia flow of 3 1/min for 60s, sample B for 400s before the temperature was then reduced to 600°C and a nominal 190 Å thick GaN layer was grown.

Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice

2020 ◽  
Vol 98 (5) ◽  
pp. 185-194
Author(s):  
Yuji Yamamoto ◽  
Cedric Corley ◽  
Markus Andreas Schubert ◽  
Marvin Zöllner ◽  
Bernd Tillack
Keyword(s):  
Threading Dislocation ◽  
Dislocation Reduction

Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice

2021 ◽  
Author(s):  
Yuji Yamamoto ◽  
Cedric Corley ◽  
Marcus Andreas Schubert ◽  
Marvin Zoellner ◽  
Bernd Tillack
Keyword(s):  
Threading Dislocation ◽  
Dislocation Reduction

Threading dislocation reduction in GaAs films on thin Si substrates

1998 ◽  
Vol 2 (1-4) ◽  
pp. 772-776 ◽  
Author(s):  
Kenzo Maehashi ◽  
Hisao Nakashima ◽  
Frank Bertram ◽  
Peter Veit ◽  
Jürgen Christen
Keyword(s):  
Threading Dislocation ◽  
Si Substrates ◽  
Dislocation Reduction ◽  
Gaas Films

A Kinetic Model for the Strain Relaxation in Heteroepitaxial Thin Film Systems

2001 ◽  
Vol 673 ◽  
Author(s):  
Y.W. Zhang ◽  
T.C. Wang ◽  
S.J. Chua
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Kinetic Model ◽  
Strain Relaxation ◽  
Experimental Results ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Dislocation Reduction ◽  
Wide Range

ABSTRACTA kinetic model is presented to simulate the strain relaxation in the GexSi1−x/Si(100) systems. In the model, the nucleation, propagation and annihilation of threading dislocations, the interaction between threading dislocations and misfit dislocations, and surface roughness are taken into account. The model reproduces a wide range of experimental results. The implications of its predictions on the threading dislocation reduction during the growth processes of the heteoepitaxial thin film systems are discussed.

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